New physics in old material: Topological and superconducting properties of stanene

Yong Xu

DOI: https://doi.org/10.1007/s11467-020-1008-y

2020-01-01

Frontiers of Physics

Abstract:The two-dimensional material stanene, realized by thinning α-Sn down to the atomic limit, provides a promising platform to explore novel quantum physics relevant to topology and superconductivity.

What problem does this paper attempt to address?

Recent Progress in the Study of Stanene

QIAN Dong,JIA JinFeng

DOI: https://doi.org/10.1360/n972016-00681

2016-01-01

Chinese Science Bulletin

Abstract:Inspired by the successfully experimental realization of graphene,other ultrathin materials consisting of group-IV elements Si,Ge and Sn have been attracted plenty of interests due to their unprecedented electronic properties.Among them,two-dimensional low-buckled Sn-based stanene and its derivatives present novel quantum properties due to its large spin-orbital coupling,such as a quantum spin Hall insulating behaviour with a very large band gap,and the capability to support enhanced thermoelectric performance,topological superconductivity and the near-room-temperature quantum anomalous Hall effect and so on.Therefore,stanene shows the great application potentials in the dissipationless electric conduction at room temperature,high performance thermoelectricity,spintronics and topological quantum computation.This review will briefly introduce the recent progress in the study of stanene both in theory and in experiment.Firstly,we will discuss the main motivation on study of the stanene.Tin (Sn) is a heavy element and stanene has the low-buckled honeycomb-like crystal structure,which makes its spin-orbital coupling strong enough to realize a quantum spin Hall state with a large energy gap of about 0.1 eV.The large bulk gap makes stanene the excellent candidate to explore the topological quantum properties of a quantum spin Hall insulator above the cryogenic temperature.Secondly,we will briefly introduce the theoretical calculations or predictions of the crystal and electronic structures of stanene.First-principle calculations show that the honeycomb-like low-buckled crystal structure of two-dimensional stanene is stable and could be realized experimentally in principle.Due to the sp3 orbitals in stanene,it has dangling bonds that can be modified by surface decoration.Long range ferromagnetic order,topological superconductivity and largely enhanced bulk energy gap (up to ～ 0.3 eV) can be achieved by proper surface decoration theoretically.Topological transition can also induced by hydrogen absorption.Thirdly,we will discuss the first experimental realization of the monolayer stanene films with low-buckled crystal structure using molecular beam epitaxy method on the Bi2Te3 single crystalline substrates,which brings the stanene to the real word and inspires more and more theoretical predictions.The crystal structure of epitaxial growth stanene was determined by scanning tunneling spectroscopy and its electronic structure was measured by angle-resolved photoemission spectroscopy.Due to the charge transfer between the epitaxial stanene and the Bi2Te3 substrate,stanene film on Bi2Te3 is not an insulator.It is hole-doped.At last,we will introduce some very recent theoretical works on how to improve stanene films beyond the current experimental achievements.Based on new proposals,new experiments could be done on the stanene films.For example,new substrate has been proposed by first-principle calculations to get high-quality stanene films with much larger area;other quantum orders such as ferromagnetism and superconductivity can be realized through surface decoration or electron doping,which can be tested using low-temperature scanning tunneling spectroscopy.Very low thermal conductivity was founded in theory in stanene,which is another very interesting experiment.Finally,new insulating substrates has been suggested by first-principle calculations to obtain insulating stanene films that can be used to study the electric transport properties of the topological one-dimensional edge states.More experiments could be carded out along this direction.
Robust Topological Edge States and Superconductivity in Few-Layer Stanene

Chenxiao Zhao,Leiqiang Li,Liying Zhang,Jin Qin,Hongyuan Chen,Bing Xia,Bo Yang,Hao Zheng,Shiyong Wang,Canhua Liu,Yaoyi Li,Dandan Guan,Ping Cui,Zhenyu Zhang,Jinfeng Jia

DOI: https://doi.org/10.21203/rs.3.rs-173918/v1

IF: 8.6

2022-01-01

Physical Review Letters

Abstract:Stanene was proposed to be a large-gap quantum spin Hall insulator, yet to date, convincing evidence of topological edge states in stanene remains to be seen, partly due to the fact that the topological property depends on the interplay between substrate, chemical functionalization, and layer thickness. Here we fabricate 1-5 layer high-quality stanene films on the Bi(111) substrate by using hydrogen atoms as surfactants, and demonstrate their strikingly robust nontrivial topology using scanning tunneling microscopy/spectroscopy and first-principles calculations. The observed topological edge states possess a bilateral-penetration depth shorter than 4 nm, allowing the formation of dense and parallel multi-edge-channels. Our calculations further show that surface hydrogenation helps to improve the quality of stanene films, while the Bi substrate endows the films with robust nontrivial topology. These stanene films also exhibit superconductivity, and the coexistence of nontrivial topology and superconductivity renders them distinct potential to become the simplest one-dimensional topological superconductors.
Coexistence of Robust Edge States and Superconductivity in Few-Layer Stanene

Chenxiao Zhao,Leiqiang Li,Liying Zhang,Jin Qin,Hongyuan Chen,Bing Xia,Bo Yang,Hao Zheng,Shiyong Wang,Canhua Liu,Yaoyi Li,Dandan Guan,Ping Cui,Zhenyu Zhang,Jinfeng Jia

DOI: https://doi.org/10.1103/physrevlett.128.206802

IF: 8.6

2022-05-18

Physical Review Letters

Abstract:High-quality stanene films have been actively pursued for realizing not only quantum spin Hall edge states without backscattering, but also intrinsic superconductivity, two central ingredients that may further endow the systems to host topological superconductivity. Yet to date, convincing evidence of topological edge states in stanene remains to be seen, let alone the coexistence of these two ingredients, owing to the bottleneck of growing high-quality stanene films. Here we fabricate one- to five-layer stanene films on the Bi(111) substrate and observe the robust edge states using scanning tunneling microscopy/spectroscopy. We also measure distinct superconducting gaps on different-layered stanene films. Our first-principles calculations further show that hydrogen passivation plays a decisive role as a surfactant in improving the quality of the stanene films, while the Bi substrate endows the films with nontrivial topology. The coexistence of nontrivial topology and intrinsic superconductivity renders the system a promising candidate to become the simplest topological superconductor based on a single-element system. https://doi.org/10.1103/PhysRevLett.128.206802 © 2022 American Physical Society

physics, multidisciplinary
Stanene: A Good Platform for Topological Insulator and Topological Superconductor

Chenxiao Zhao,Jinfeng Jia

DOI: https://doi.org/10.1007/s11467-020-0965-5

2020-07-11

Abstract:Two dimensional (2D) topological insulators (TIs) and topological superconductors (TSCs) have been intensively studied for recent years due to its great potential for dissipationless electron transportation and fault-tolerant quantum computing, respectively. Here we focus on stanene, the tin analogue of graphene, to give a brief review of its development as a candidate for both 2D TI and TSC. Stanene is proposed to be a TI with a large gap of 0.3 eV, and its topological properties are sensitive to various factors, e.g., the lattice constants, chemical functionalization and layer thickness, which offer various methods for phase tunning. Experimentally, the inverted gap and edge states are observed recently, which are strong evidence for TI. In addition, stanene is also predicted to be a time reversal invariant TSC by breaking inversion symmetry, supporting helical Majorana edge modes. The layer-dependent superconductivity of stanene is recently confirmed by both transport and scanning tunneling microscopy measurements. This review gives a detailed introduction to stanene and its topological properties and some prospects are also discussed.

Materials Science,Mesoscale and Nanoscale Physics
Superconducting Properties and Topological Nodal Line Signatures in Centrosymmetric Compound SnTaS$_2$

Dongyun Chen,Yuelong Wu,Lei Jin,Yongkai Li,Xiaoxiong Wang,Junxi Duan,Junfeng Han,Xiang Li,Yun‐Ze Long,Xiaoming Zhang,Dong Chen,Bing Teng

2019-01-01

Abstract:We report the magnetization, electrical resistivity, specific heat measurements and band structure calculations of layered superconductor SnTaS$_2$. The experiments are performed on single crystals grown by chemical vapor transport method. The resistivity and magnetic susceptibility indicate that SnTaS$_2$ is a type-II superconductor with transition temperature $T_c = 3$ K. The upper critical field ($H_{c2}$) shows large anisotropy for magnetic field parallel to $ab$ plane ($H//ab$) and $c$ axis ($H//c$), and the temperature dependence of $H_{c2}$ for $H//ab$ shows obvious unconventional upward feature at low temperature. Band structure of SnTaS$_2$ shows several band crossings near the Fermi level, which form three nodal lines in the k$_z$ = 0 plane resulting in drumhead-like surface states when spin-orbit coupling is not considered. These results indicate that SnTaS$_2$ is a superconductor with possible topological nodal line semimetal character.
Recent Advances in Tin: from Two-Dimensional Quantum Spin Hall Insulator to Bulk Dirac Semimetal.

Nan Si,Qi Yao,Yixuan Jiang,Heping Li,Dechun Zhou,Qingmin Ji,Han Huang,Hui Li,Tianchao Niu

DOI: https://doi.org/10.1021/acs.jpclett.9b03538

2020-01-01

Abstract:An atomic layer of tin in a buckled honeycomb lattice, termed stanene, is a promising large-gap two-dimensional topological insulator for realizing room-temperature quantum-spin-Hall effect and therefore has drawn tremendous interest in recent years. Because the electronic structures of Sn allotropes are sensitive to lattice strain, e.g. the semimetallic α-phase of Sn can transform into a three-dimensional topological Dirac semimetal under compressive strain, recent experimental advances have demonstrated that stanene layers on different substrates can also host various electronic properties relating to in-plane strain, interfacial charge transfer, layer thickness, and so on. Thus, comprehensive understanding of the growth mechanism at the atomic scale is highly desirable for precise control of such tunable properties. Herein, the fundamental properties of stanene and α-Sn films, recent achievements in epitaxial growth, challenges in high-quality synthesis, and possible applications of stanene are discussed.
Topological Physics of Xenes

Li Yang,Zhiming Xu,Zetao Zhang,Yingbo Zhang,Yong Xu

DOI: https://doi.org/10.1016/b978-0-12-823824-0.00011-3

2022-01-01

Abstract:The discovery of graphene has opened an intriguing research direction—two-dimensional (2D) materials. Following graphene, a batch of similar materials called Xenes have also been discovered. Xene refers to a 2D material with a (buckled) honeycomb lattice composed of element X (X=Si, Ge, Sn, Bi, etc.). Compared to graphene, the chemical bonding is weaker, and the geometric structure usually is not atomically flat in Xenes, which enables further chemical decoration and properties control. Moreover, the buckled structure and the strong spin–orbit coupling concurrently pave a pathway for accessing new quantum states of matter, such as the quantum spin Hall (QSH) effect, the quantum anomalous Hall (QAH) effect, topological superconductivity, and Ising superconductivity. In the first section, we briefly introduce the basic concept of the QSH effect, which is protected by time-reversal symmetry (TRS), and its realization in Xene. The second section describes the possible routes to realize the QAH states by breaking the TRS. Then we introduce two other novel topological states in Xenes, including topological superconductivity and Ising superconductivity, in the third part. Finally, we briefly introduce the interplay of topological states and thermoelectric effects in Xenes. The novel topological quantum physics revealed in Xenes is not of fundamental importance but also may find promising applications in the future.
Epitaxial growth of ultraflat stanene with topological band inversion

Jialiang Deng,Bingyu Xia,Xiaochuan Ma,Haoqi Chen,Huan Shan,Xiaofang Zhai,Bin Li,Aidi Zhao,Yong Xu,Wenhui Duan,Shou-Cheng Zhang,Bing Wang,J. G. Hou

DOI: https://doi.org/10.1038/s41563-018-0203-5

IF: 41.2

2018-01-01

Nature Materials

Abstract:Two-dimensional (2D) topological materials, including quantum spin/anomalous Hall insulators, have attracted intense research efforts owing to their promise for applications ranging from low-power electronics and high-performance thermoelectrics to fault-tolerant quantum computation. One key challenge is to fabricate topological materials with a large energy gap for room-temperature use. Stanene—the tin counterpart of graphene—is a promising material candidate distinguished by its tunable topological states and sizeable bandgap. Recent experiments have successfully fabricated stanene, but none of them have yet observed topological states. Here we demonstrate the growth of high-quality stanene on Cu(111) by low-temperature molecular beam epitaxy. Importantly, we discovered an unusually ultraflat stanene showing an in-plane s–p band inversion together with a spin–orbit-coupling-induced topological gap (~0.3 eV) at the Γ point, which represents a foremost group-IV ultraflat graphene-like material displaying topological features in experiment. The finding of ultraflat stanene opens opportunities for exploring two-dimensional topological physics and device applications.
de Haas-van Alphen effect and the first-principles study of the possible topological stannide Cu3Sn

Chengxu Liu,Bin Li,Yongheng Ge,Chuanying Xi,Yi Liu,Chunqiang Xu,Qi Lu,Yunlong Li,Hang-Qiang Qiu,Qin-Qing Zhu,Yu-Ke Li,Zhi Ren,Ziming Zhu,Dong Qian,Xianglin Ke,Xiaofeng Xu,Wen-He Jiao

DOI: https://doi.org/10.1016/j.jallcom.2022.167017

IF: 6.2

2022-12-20

Journal of Alloys and Compounds

Abstract:The search for quantum materials with various symmetry-protected topological states has been the focus of recent research interest, primarily due to their fascinating physical properties and the potential technological utility. In this work, we report on the magnetotransport, de Haas-van Alphen (dHvA) oscillations, and the first-principles calculations of the stannide Cu3Sn that is isostructural with the recently reported topological semimetal Ag3Sn. The magnetoresistance was found to vary quasi-linearly in field. Clear dHvA oscillations were observed under a field as low as 1 Tesla at 2 K, with three major oscillation frequencies Fα = 8.74 T, Fβ = 150.19 T and Fγ = 229.66 T and extremely small effective masses. The analysis of dHvA quantum oscillations revealed a possible nonzero Berry phase, suggestive of the nontrivial band topology. The corroborating evidence for the nontrivial electronic topology also comes from the first-principles calculations which yield a nonzero Z2 topological index. These results collectively suggest that Cu3Sn, in analogy to its homolog Ag3Sn, may be another intermetallic stannide hosting topological Dirac fermions.

materials science, multidisciplinary,chemistry, physical,metallurgy & metallurgical engineering
Molecular Beam Epitaxy Growth of Few-Layer Stanene

Yunyi Zang,Kejing Zhu,Lin Li,Ke He

DOI: https://doi.org/10.1007/s44214-022-00012-y

2022-01-01

Quantum Frontiers

Abstract:Two-dimensional topological materials, especially quantum spin Hall insulators, have attracted enormous research interest owing to their potential for applications ranging from low-power electronics to fault-tolerant quantum computation. Stanene—the tin counterpart of graphene—is a promising candidate for room-temperature quantum spin Hall insulators, motivated by its simple atomic structure and considerable band-inversion gap. Nevertheless, one key challenge is to fabricate topological non-trivial stanene on insulating substrates. In this Perspective, we review recent developments in experimental routes to the creation of few-layer stanene films on various substrates. A quantitative comparison between these stanene films on different substrates is also presented.
Combining quantum spin hall effect and superconductivity in few-layer stanene

Chenxiao Zhao,Jin Qin,Bing Xia,Bo Yang,Hao Zheng,Shiyong Wang,Canhua liu,Yaoyi Li,Dandan Guan,Jinfeng Jia

2020-01-01

Abstract: Stanene was proposed to be a quantum spin hall insulator containing topological edges states and a time reversal invariant topological superconductor hosting helical Majorana edge mode. Recently, experimental evidences of existence of topological edge states have been found in monolayer stanene films and superconductivity has been observed in few-layer stanene films excluding single layer. An integrated system with both topological edge states and superconductivity are higly pursued as a possible platform to realize topological superconductivity. Few-layer stanene show great potential to meet this requirement and is highly desired in experiment. Here we successfully grow few-layer stanene on bismuth (111) substrate. Both topological edge states and superconducting gaps are observed by in-situ scanning tunneling microscopy/spectroscopy (STM/STS). Our results take a further step towards topological superconductivity by stanene films.
Enhanced Anisotropic Superconductivity in the Topological Nodal-Line Semimetal InxTaS2

Yupeng Li,Zhongxiu Wu,Jingang Zhou,Kunliang Bu,Chenchao Xu,Lei Qiao,Miaocong Li,Hua Bai,Jiang Ma,Qian Tao,Chao Cao,Yi Yin,Zhu-An Xu

DOI: https://doi.org/10.1103/physrevb.102.224503

IF: 3.7

2020-01-01

Physical Review B

Abstract:Coexistence of topological bands and charge density wave (CDW) in topological materials has attracted immense attentions because of their fantastic properties, such as axionic-CDW, three-dimensional quantum Hall effect, etc. In this work, a nodal-line semimetal InxTaS2 characterized by CDW and superconductivity is successfully synthesized, whose structure and topological bands (two separated Wely rings) are similar to In0.58TaSe2. A 2 x 2 commensurate CDW is observed at low temperature in InxTaS2, identified by transport properties and STM measurements. Moreover, superconductivity emerges below 0.69 K, and the anisotropy ratio of upper critical field [Gamma = H||ab c2(0)=H||c c2(0)] is significantly enhanced compared to 2H-TaS2, which shares the same essential layer unit. According to the Lawrence-Doniach model, the enhanced Gamma may be explained by the reduced effective mass in kx-ky plane, where Weyl rings locate. Therefore, this type of layered topological systems may offer a platform to investigate highly anisotropic superconductivity and to understand the extremely large upper critical field in the bulk or in the two-dimensional limit.
Realizing an Epitaxial Stanene with an Insulating Bandgap

Yunyi Zang,Tian Jiang,Yan Gong,Zhaoyong Guan,Menghan Liao,Zhe Li,Lili Wang,Wei Li,Canli Song,Ding Zhang,Yong Xu,Ke He,Xucun Ma,Shou-Cheng Zhang,Qi-Kun Xue

DOI: https://doi.org/10.48550/arXiv.1711.07035

2017-11-19

Materials Science

Abstract:Stanene, a single atomic layer of Sn in a honeycomb lattice, is predicted a candidate wide bandgap two-dimensional (2D) topological insulator and can host intriguing topological states of matter such as quantum anomalous Hall effect and topological superconductivity with different surface modifications. Despite intensive research efforts, one still cannot obtain bulk-insulating stanene samples-a prerequisite for any transport studies and applications of stanene. Here we show the experimental realization of an epitaxial stanene with an insulating bulk bandgap by using PbTe(111) substrates. With low-temperature molecular beam epitaxy, we are able to grow single layer stanene on PbTe(111). In-situ angle-resolved photoemission spectroscopy shows the characteristic stanene bands with its Fermi level lying in the bandgap. Doping Sr in PbTe removes the substrate states located in the stanene gap, resulting in a stanene sample with truly insulating bulk. This experimental progress paves the way for studies of stanene-based topological quantum effects.
Staggering Transport of Edge States and Symmetry Analysis of Electronic and Optical Properties of Stanene.

Yongqing Cai,Gang Zhang,Yong-Wei Zhang

DOI: https://doi.org/10.1039/d0nr05133k

IF: 6.7

2020-01-01

Nanoscale

Abstract:As one of the most intriguing elemental 2D materials beyond graphene, stanene is a unique material possessing strong quantum spin Hall effect and is promising for spintronics applications. Since most of these exotic phenomena are associated with the edge states of stanene and their responses under external stimuli, here, we first investigate the electronic and transport behavior of the edge states of stanene. Through examining the acoustic phonon-limited scattering of transporting carriers, we reveal a staggering behavior in the effective mass and mobility varying with the width of stanene nanoribbons. Remarkably, an opposite oscillating trend of the quantum confinement effect with respect to the electrons and holes is found and this trend is in sharp contrast to graphene. Moreover, through group-theory analysis, we further analyze the symmetry-permitted light absorptions and predict a much smaller band gap at Γ compared with other IV-group 2D materials like graphene and silicene, allowing for a red-shift of optical π-π* absorption in stanene. The presence of the narrow flat bands along the M-K path in stanene suggests appreciable density of states of low-energy carriers and a strong light-matter interaction for low-energy photons, which are beneficial for its applications in low-frequency optoelectronics.
Epitaxial growth and electronic properties of few-layer stanene on InSb (1 1 1)

Xiaohu Zheng,Jianfeng Zhang,Bingbing Tong,Rui-Rui Du

DOI: https://doi.org/10.1088/2053-1583/ab42b9

IF: 6.861

2020-01-01

2D Materials

Abstract:Stanene has been theoretically predicted to be a 2D topological insulator with a large band gap, potentially hosting quantum spin Hall effect at room temperature. Here, few-layer stanene films have been epitaxially grown on Sb-terminated InSb (1 1 1) surface and their structural and electrical properties are characterized. Scanning tunneling spectrum results reveal a large bulk bandgap in single-layer stanene (over 0.2 eV). Moreover, spectroscopy evidence for a filled edge state near the steps was observed. The gap decreases dramatically with increasing number of layers, and multilayer stanene should become a Dirac semimetal in the bulk limit. The changeover may involve nontrivial topological phase transitions. Clear and reproducible Shubnikov–de Haas oscillations were observed on the single-layer stanene films that were exposed to atmospheric conditions for an extended period of time, showing the possibility for device experiments using nanofabrication and magneto-transport. Our results demonstrate that the single-layer stanene is a promising topological material for exploring fundamental physics and quantum applications.
High-buckled R3 Stanene with Topologically Nontrivial Energy Gap

Ye-Heng Song,Zhi-Wen Wang,Zhen-Yu Jia,Xin-Yang Zhu,Zhi-Qiang Shi,Li Zhu,Qian-Qian Yuan,Da-Jun Shu,Shao-Chun Li

DOI: https://doi.org/10.1088/1361-6463/abfce8

2017-01-01

Abstract:Stanene has been predicted to be a two-dimensional topological insulator (2DTI). Its low-buckled atomic geometry and the enhanced spin-orbit coupling are expected to cause a prominent quantum spin hall (QSH) effect. However, most of the experimentally grown stanene to date displays a metallic state without a real gap, possibly due to the chemical coupling with the substrate and the stress applied by the substrate. Here,we demonstrate an efficient way of tuning the atomic buckling in stanene to open a topologically nontrivial energy gap. Via tuning the growth kinetics, we obtain not only the low-buckled 1x1 stanene but also an unexpected high-buckled R3xR3 stanene on the Bi(111) substrate. Scanning tunneling microscopy (STM) study combined with density functional theory (DFT) calculation confirms that the R3xR3 stanene is a distorted 1x1 structure with a high-buckled Sn in every three 1x1 unit cells. The high-buckled R3xR3 stanene favors a large band inversion at the Γ point, and the spin orbital coupling open a topologically nontrivial energy gap. The existence of edge states as verified in both STM measurement and DFT calculation further confirms the topology of the R3xR3 stanene. This study provides an alternate way to tune the topology of monolayer 2DTI materials.
Single-Atomic-Layer Stanene on Ferromagnetic Co Nanoislands with Topological Band Structures

Chia-Ju Chen,Yung-Chun Chao,Yen-Hui Lin,Yi-Hao Zhuang,Yen-Ming Lai,Shih-Tang Huang,Allan H. MacDonald,Chih-Kang Shih,Bo-Yao Wang,Jung-Jung Su,Pin-Jui Hsu

DOI: https://doi.org/10.1021/acsnano.2c12144

IF: 17.1

2023-04-06

ACS Nano

Abstract:Introducing magnetism to two-dimensional topological insulators is a central issue in the pursuit of magnetic topological materials in low dimensionality. By means of low-temperature growth at 80 K, we succeeded in fabricating a monolayer stanene on Co/Cu(111) and resolving ferromagnetic spin contrast by field-dependent spin-polarized scanning tunneling microscopy (SP-STM). Increases of both remanence to saturation magnetization ratio (M(r)/M(s)) and coercive field (H(c)) due to an enhanced...

materials science, multidisciplinary,chemistry, physical,nanoscience & nanotechnology
Artificial Gravity Field, Astrophysical Analogues, and Topological Phase Transitions in Strained Topological Semimetals

Shan Guan,Zhi-Ming Yu,Ying Liu,Gui-Bin Liu,Liang Dong,Yunhao Lu,Yugui Yao,Shengyuan A. Yang

DOI: https://doi.org/10.1038/s41535-017-0026-7

2017-01-01

Abstract:Effective gravity and gauge fields are emergent properties intrinsic for low-energy quasiparticles in topological semimetals. Here, taking two Dirac semimetals as examples, we demonstrate that applied lattice strain can generate warped spacetime, with fascinating analogues in astrophysics. Particularly, we study the possibility of simulating black-hole/white-hole event horizons and gravitational lensing effect. Furthermore, we discover strain-induced topological phase transitions, both in the bulk materials and in their thin films. Especially in thin films, the transition between the quantum spin Hall and the trivial insulating phases can be achieved by a small strain, naturally leading to the proposition of a novel piezo-topological transistor device. Possible experimental realizations and analogue of Hawking radiation effect are discussed. Our result bridges multiple disciplines, revealing topological semimetals as a unique table-top platform for exploring interesting phenomena in astrophysics and general relativity; it also suggests realistic materials and methods to achieve controlled topological phase transitions with great potential for device applications.
Superconducting properties and topological nodal lines features in centrosymmetric Sno.sTaSe2

Mukhtar L.Adam,Zhanfeng Liu,Oyawale A.Moses,Xiaojun Wu,Li Song

IF: 9.9

2021-01-01

Nano Research

Abstract:Nontrivial topological behaviors in superconducting materials provide resourceful ground for the emergence and study of unconventional quantum states.Charge doping by the controlled intercalation of donor atoms is an efficient route for enhancing/inducement of superconducting and topological behaviors in layered topological insulators and semimetals.Herein,we enhanced the superconducting temperature of TaSe2 by 20-folds (～ 3 K) through Sn atoms intercalation.Using first-principles calculations,we demonstrated the existence of nontrivial topological features.Sn0.5TaSe2 displays topological nodal lines around the K high symmetry point in the Brillouin zone,with drumhead-like shaped surface states protected by inversion symmetry.Altogether,the coexistence of these properties makes Sn0.5TaSe2 a potential candidate for topological superconductivity.
Engineering ideal helical topological networks in stanene via Zn decoration

Jennifer Coulter,Mark R. Hirsbrunner,Oleg Dubinkin,Taylor L. Hughes,Boris Kozinsky

DOI: https://doi.org/10.1038/s42005-024-01764-w

2024-08-23

Communications Physics

Abstract:The xene family of topological insulators plays a key role in many proposals for topological electronic, spintronic, and valleytronic devices. These proposals rely on applying local perturbations, including electric fields and proximity magnetism, to induce topological phase transitions in xenes. However, these techniques lack control over the geometry of interfaces between topological regions, a critical aspect of engineering topological devices. We propose adatom decoration as a method for engineering atomically precise topological edge modes in xenes. Our first-principles calculations show that decorating stanene with Zn adatoms exclusively on one of two sublattices induces a topological phase transition from the quantum spin Hall (QSH) to quantum valley Hall (QVH) phase and confirm the existence of spin-valley polarized edge modes propagating at QSH/QVH interfaces. We conclude by discussing technological applications of these edge modes that are enabled by the atomic precision afforded by recent advances in adatom manipulation technology.

physics, multidisciplinary

New physics in old material: Topological and superconducting properties of stanene

Recent Progress in the Study of Stanene

Robust Topological Edge States and Superconductivity in Few-Layer Stanene

Coexistence of Robust Edge States and Superconductivity in Few-Layer Stanene

Stanene: A Good Platform for Topological Insulator and Topological Superconductor

Superconducting Properties and Topological Nodal Line Signatures in Centrosymmetric Compound SnTaS$_2$

Recent Advances in Tin: from Two-Dimensional Quantum Spin Hall Insulator to Bulk Dirac Semimetal.

Topological Physics of Xenes

Epitaxial growth of ultraflat stanene with topological band inversion

de Haas-van Alphen effect and the first-principles study of the possible topological stannide Cu3Sn

Molecular Beam Epitaxy Growth of Few-Layer Stanene

Combining quantum spin hall effect and superconductivity in few-layer stanene

Enhanced Anisotropic Superconductivity in the Topological Nodal-Line Semimetal InxTaS2

Realizing an Epitaxial Stanene with an Insulating Bandgap

Staggering Transport of Edge States and Symmetry Analysis of Electronic and Optical Properties of Stanene.

Epitaxial growth and electronic properties of few-layer stanene on InSb (1 1 1)

High-buckled R3 Stanene with Topologically Nontrivial Energy Gap

Single-Atomic-Layer Stanene on Ferromagnetic Co Nanoislands with Topological Band Structures

Artificial Gravity Field, Astrophysical Analogues, and Topological Phase Transitions in Strained Topological Semimetals

Superconducting properties and topological nodal lines features in centrosymmetric Sno.sTaSe2

Engineering ideal helical topological networks in stanene via Zn decoration