Abstract:The recent surge of interest in ytterbium-based lasers is focused on high-power diode-pumped all-solid-state laser sources. One of the advantages of the Yb3+ ion are the relatively broad absorption and emission bands. They are much smoother and display less structure in glass host materials than those of %:YAG, a promising feature for tunable operation and generation of ultrashort laser pulses. Efficient diode pumping of %:glass has already been demonstrated under continuous-wave conditions.'32 The first attempt to modelock the %:YAG laser by a passive method (A-FPSA) resulted in 540-fs-long pulses at 1.03 I J . ~ . ~ Here we demonstrate cw passive modelocking of an %:glass laser for the first time to our knowledge, based entirely on the Kerr effect in the active medium in a resonator with dispersion compensation. The glass sample used was doped with 6 X 10' cm-3 Yb3+ and exhibits a fluorescence lifetime of 1.2 ms. In our experiments a cw Tksapphire laser acts as the pump source. The output of the pump laser (3 W at 940 nm) was focused into the 4-mm-thick %:glass sample by a 60 mm lens. The active material was positioned at the Brewster angle between two folding mirrors in a standard astigmatically compensated type-Z laser configuration (Fig. 1). The cavity could be operated as a free-running cw laser by use of M, (Fig. 1) yielding >350 mW ofoutput power near 1035 nm at 1.2 W of absorbed pump radiation with a threshold of -150 mW. Essential for the achievement of pure passive modelocking was the minimization of all losses at the maximum pump power available. After optimization in the cw free-running regime modelocked operation was achieved then by precise adjustment of the two prisms, the %:glass sample and the 3-mm-wide vertical slit employed as an aperture near the output coupler Mi. Starting of the laser was accomplished through slow translation of one of the

Single-Digit Attosecond Carrier-Envelope Phase Stabilization of an Er:Yb:Glass Laser with Feed-Forward Technique

Long-term Carrier-Envelope-phase Stabilized Fiber-Bulk Hybrid Laser with Millihertz Linewidth and 50 W Average Power

Generation of Carrier-Envelope Phase Stabilized Laser from Solid Plates and Application in High-Harmonic Generation

Nonintrusive phase stabilization of sub-two-cycle pulses from a prismless octave-spanning Ti:sapphire laser

Stabilizing Carrier-Envelope Offset Frequency of a Femtosecond Laser Using Heterodyne Interferometry.

Long-Term Stabilization Of Mode-Locked Er-Fiber Lasers With 1.2 Fs Timing Jitter

Repetition Rate Stabilization of an Erbium-Doped All-Fiber Laser Via Opto-Mechanical Control of the Intracavity Group Velocity

Pump-induced Carrier Envelope Offset Frequency Dynamics and Stabilization of an Yb-doped Fiber Frequency Comb

All-optical stabilization of carrier-envelope phase by use of difference frequency generation with seeded amplification of colored conical emission

Carrier-Envelope Phase Control of a 10 Hz, 25 TW Laser for High-Flux XUV Continuum Generation

Carrier-envelope offset frequency stabilization of a thin-disk laser oscillator operating in the strongly self-phase modulation broadened regime

Carrier-envelope phase control of high-power and harmonically mode-locked Yb-doped fiber lasers

220 fs Er-Yb:glass laser mode-locked by a broadband low-loss Si/Ge saturable absorber

Carrier-envelope phase-stable few-cycle pulses from two stage hybrid compression of a Yb:KGW amplifier

High-power Yb-fiber comb with feed-forward control of nonlinear-polarization-rotation mode-locking and large-mode-area fiber amplification.

Stabilization of Carrier-Envelope Phase by Locking the Differenced Frequency Femtosecond Ti:sapphire Laser with TV-Rb Clock

1 Khz Single-Frequency, Injection-Seeded Er:YAG Laser with an Optical Feedback

High Power Carrier-Envelop Phase Stabilized 1030 Nm Pulses Amplified from a Ti:sapphire Laser

Coherent Terahertz Detection: Free Space Electro-Optic Sampling Versus Antenna Detection

1 GHz Repetition Rate Femtosecond Yb:fiber Laser for Direct Generation of Carrier-Envelope Offset Frequency.

24 H Frequency Stabilisation of an SLM External-Cavity Semiconductor Laser