Abstract:Transparent and conducting HfxZn1-xO thin films with nominal Hf doping concentration (x = 0-7%) were suc-cessfully synthesized on flexible polyimide (PI) substrates by the sol-gel spin coating method. All films showed hexagonal wurtzite structure of ZnO with preferred orientation of c-axis after air and vacuum annealing. The minimum resistivity reached to as low as 6.3 x 10(-2) Omega cm after annealed in vacuum atmosphere with 3% Hf content. The carrier concentration increased from 10(18) cm(-3) to 10(19) cm(-3), while Hall mobility decreased from 23 cm(2)v(-1)s(-1) to 3 cm(2)v(-1)s(-1) with increasing Hf concentration. According to the SEM and XPS analysis, for x = 0-3%, grain boundary scattering was the major factor of mobility, while for x = 5-7%, besides the grain boundary scattering, ionized impurity and natural scattering also play a crucial role in the variation of mobility. The minimum resistivity was due to the competition of increasing carrier concentration and decreasing mobility.

Effect of Hf doping content on the structure, optical and electrical properties of flexible Hf<i><sub>x</sub></i>Zn<sub>1-<i>x</i></sub>O thin films by sol-gel method