Parallel Stateful Logic in RRAM: Theoretical Analysis and Arithmetic Design
Feng Wang, Guojie Luo, Guangyu Sun, Jiaxi Zhang, Peng Huang, Jinfeng Kang
DOI: https://doi.org/10.1109/ASAP.2019.000-8
2019-01-01
Abstract:Processing-in-memory (PIM) provides massive parallelism with high energy efficiency and becomes a promising solution to the memory wall problem. Recently, the emerging metal-oxide resistive random access memory (RRAM) has shown its potential to design a PIM architecture. Several stateful logic operations, e.g., NOR and NAND, can be executed in parallel in an RRAM crossbar. Although previous works have designed some algorithms using the stateful logic, it is still under exploration how to fully exploit its potential high parallelism and design an asymptotically fast algorithm for a given function. In this work, we theoretically analyze the parallelism in an RRAM crossbar and design several asymptotically optimal arithmetic algorithms. In detail, we first propose the Single Instruction Multiple Lines (SIML) model to unify the stateful logic families and prove three lower bounds on the time complexity of a parallel RRAM algorithm. Then, we design three algorithms for integer addition functions with the stateful logic, guided by the lower bound analysis. All of them reach the time complexity lower bound. Finally, We make two extensions of the integer addition algorithms, supporting multiplication functions by decomposing them to additions and supporting the flex-point data type by proposing an exponent and mantissa update flow. Experimental evaluation shows that our integer algorithms achieves a speedup up to 13.79x over the previous RRAM algorithms. Our flex-point implementation achieves a 26.60x speedup and saves 73.68% energy compared to an ARM.