Ultrafast broadband reverse saturation absorption in Al-doped InSe thin films for optical limiting at visible/near-infrared

Xiaoyan Yan,Xingzhi Wu,Yu Fang,Wenjun Sun,Chengbao Yao,Yuxiao Wang,Xueru Zhang,Yinglin Song

DOI: https://doi.org/10.1016/j.optmat.2020.110171

IF: 3.754

2020-01-01

Optical Materials

Abstract:Metal-doped InSe has received much attention due to the ultrafast response and strong nonlinearity at high laser fluence. Herein, Al-doped InSe with different doping contents (1.5 W, 2.0 W, and 2.5 W) and pure InSe thin films are fabricated using a magnetron sputtering technology to systematically study their nonlinear absorption behavior at visible/near-infrared. Al-doped InSe (2.5 W) thin film exhibits ultrafast carrier absorption (<1 ps) and broadband nonlinear response (525–1075 nm), which is a potential reverse saturation absorption (RSA) material for optical limiting. With the increment of Al doping content, the consistency, grain size and crystallinity of Al-doped InSe thin films have a corresponding enhancement. The results of femtosecond transient absorption spectrum indicate that ultrafast broadband RSA behavior at 525–1075 nm in Al-doped InSe thin films arises from two-photon absorption (TPA) and free-carrier absorption (FCA). Furthermore, the RSA intensity, carrier relaxation time, ultrafast carrier absorption and broadband nonlinear response of Al-doped InSe thin films can controllably tuned by Al doping content. The optical limiting threshold of Al-doped InSe thin films is 11–45 mJ/cm2 under the excitation of 532 nm, 800 nm, and 1064 nm, respectively. More importantly, Al-doped InSe (2.5 W) thin film can successfully reduce the optical limiting threshold by 8 times contrast to pure InSe in the identical excitation conditions.