Optical and Electronic Properties of ZnO:P/n+-Si Heterostructures Fabricated by Metalorganic Chemical Vapour Deposition

H. Zhu,G. Du,X. Li,Y. Zhang,Y. Cui,K. Huang,X. Xia,T. Yang,B. Zhang,Y. Chang

DOI: https://doi.org/10.1088/0268-1242/21/8/019

IF: 2.048

2007-01-01

Semiconductor Science and Technology

Abstract:ZnO:P/n+-Si heterostructures were fabricated on n+-Si substrates by metalorganic chemical vapour deposition. The substrates were heavily doped with phosphorus. The crystallinity and optical properties of ZnO films were characterized by photoluminescence spectra and x-ray diffraction, respectively. X-ray photoelectron spectroscopy (XPS) showed that phosphorus atoms existed in ZnO films. The current–voltage (I–V) curve showed current rectification characteristic behaviour.