Fabrication of Cu2O/Si Nanowires Photocathode and Its Photoelectrochemical Properties

Yun Hu,Yufeng Luo,Shaohuan Liu,Fayun Zhang,Senlin Rao,Fahui Wang,Yunming Li,Shuigen Li,Wei Zhong
DOI: https://doi.org/10.1088/1361-6641/ab73e8
IF: 2.048
2020-01-01
Semiconductor Science and Technology
Abstract:Using a simple dipping method, Cu2O nanoparticles were successfully deposited on the surface and the sidewall of silicon nanowires (Si NWs). As a photocathode, the Cu2O/Si NWs composites not only show a low reflectance of 10.75% in the 300–900 nm wavelength range, but also can enhance the separation of the photogenerated electron–hole pairs due to the junction formed by Cu2O and Si NWs. The Cu2O/Si NWs-20 min photocathode achieved a photocurrent of 3.5 mA cm−2 at −0.8 V versus AgCl/Ag and a photoconversion efficiency of 1.2%.
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