Abstract:Silicon hole quantum dots have been the subject of considerable attention thanks to their strong spin-orbit coupling enabling electrical control. The physics of silicon holes is qualitatively different from germanium holes and requires a separate theoretical description. In this work, we theoretically study the electrical control and coherence properties of silicon hole dots with different magnetic field orientations. We discuss possible experimental configurations to optimize the electric dipole spin resonance (EDSR) Rabi time, the phonon relaxation time, and the dephasing due to random telegraph noise. Our main findings are: (i) The in-plane $g$-factor is strongly influenced by the presence of the split-off band, as well as by any shear strain. The $g$-factor is a non-monotonic function of the top gate electric field, in agreement with recent experiments. This enables coherence sweet spots at specific values of the top gate field and specific magnetic field orientations. (ii) Even a small ellipticity (aspect ratios $\sim 1.2$) causes significant anisotropy in the in-plane $g$-factor, which can vary by $50\% - 100\%$ as the magnetic field is rotated in the plane. (iii) EDSR Rabi frequencies are comparable to Ge, and the ratio between the relaxation time and the EDSR Rabi time $\sim 10^5$. For an out-of-plane magnetic field the EDSR Rabi frequency is anisotropic with respect to the orientation of the driving electric field, varying by $\approx 20\%$ as the driving field is rotated in the plane. Our work aims to stimulate experiments by providing guidelines on optimizing configurations and geometries to achieve robust, fast and long-lived hole spin qubits in silicon.

Berry Phase Induced Entanglement of Hole-Spin Qubits in a Microwave Cavity

Cavity-mediated entanglement of parametrically driven spin qubits via sidebands

Circuit QED with Hole-Spin Qubits in Ge/Si Nanowire Quantum Dots

Protocols to measure the non-Abelian Berry phase by pumping a spin qubit through a quantum-dot loop

Phase driving hole spin qubits

Longitudinal and transverse electric field manipulation of hole spin-orbit qubits in one-dimensional channels

Optimal operation of hole spin qubits

Modelling of planar germanium hole qubits in electric and magnetic fields

Geometric spin dephasing of carriers with strong spin-orbit coupling

Exchange anisotropies in microwave-driven singlet-triplet qubits

Gate Tunable Hole Charge Qubit Formed in a Ge/Si Nanowire Double Quantum Dot Coupled to Microwave Photons

Modeling of planar germanium hole qubits in electric and magnetic fields

Electrical operation of hole spin qubits in planar MOS silicon quantum dots

Longitudinal coupling between electrically driven spin-qubits and a resonator

Cavity magnonics with domain walls in insulating ferromagnetic wires

Squeezed hole spin qubits in Ge quantum dots with ultrafast gates at low power

Ge hole spin qubit

Revealing the Berry phase under the tunneling barrier

Wess-Zumino-Berry Phase Interference in Spin Tunnelling at Excited Levels with A Magnetic Field

Strong hole-photon coupling in planar Ge for probing charge degree and strongly-correlated states

Engineering Entangled Microwave Photon States Through Multiphoton Interactions Between Two Cavity Fields and a Superconducting Qubit