Fusion of memristor and digital compute-in-memory processing for energy-efficient edge computing
Tai-Hao Wen,Je-Min Hung,Wei-Hsing Huang,Chuan-Jia Jhang,Yun-Chen Lo,Hung-Hsi Hsu,Zhao-En Ke,Yu-Chiao Chen,Yu-Hsiang Chin,Chin-I Su,Win-San Khwa,Chung-Chuan Lo,Ren-Shuo Liu,Chih-Cheng Hsieh,Kea-Tiong Tang,Mon-Shu Ho,Chung-Cheng Chou,Yu-Der Chih,Tsung-Yung Jonathan Chang,Meng-Fan Chang
DOI: https://doi.org/10.1126/science.adf5538
IF: 56.9
2024-04-19
Science
Abstract:Artificial intelligence (AI) edge devices prefer employing high-capacity nonvolatile compute-in-memory (CIM) to achieve high energy efficiency and rapid wakeup-to-response with sufficient accuracy. Most previous works are based on either memristor-based CIMs, which suffer from accuracy loss and do not support training as a result of limited endurance, or digital static random-access memory (SRAM)–based CIMs, which suffer from large area requirements and volatile storage. We report an AI edge processor that uses a memristor-SRAM CIM-fusion scheme to simultaneously exploit the high accuracy of the digital SRAM CIM and the high energy-efficiency and storage density of the resistive random-access memory memristor CIM. This also enables adaptive local training to accommodate personalized characterization and user environment. The fusion processor achieved high CIM capacity, short wakeup-to-response latency (392 microseconds), high peak energy efficiency (77.64 teraoperations per second per watt), and robust accuracy (<0.5% accuracy loss). This work demonstrates that memristor technology has moved beyond in-lab development stages and now has manufacturability for AI edge processors.
multidisciplinary sciences