Seamlessly Splicing Metallic SnxMo1− Xs2 at MoS2 Edge for Enhanced Photoelectrocatalytic Performance in Microreactor

Gonglei Shao,Yizhen Lu,Jinhua Hong,Xiong-Xiong Xue,Jinqiang Huang,Zheyuan Xu,Xiangchao Lu,Yuanyuan Jin,Xiao Liu,Huimin Li,Sheng Hu,Kazu Suenaga,Zheng Han,Ying Jiang,Shisheng Li,Yexin Feng,Anlian Pan,Yung-Chang Lin,Yang Cao,Song Liu
DOI: https://doi.org/10.1002/advs.202002172
IF: 15.1
2020-01-01
Advanced Science
Abstract:Accurate design of the 2D metal-semiconductor (M-S) heterostructure via the covalent combination of appropriate metallic and semiconducting materials is urgently needed for fabricating high-performance nanodevices and enhancing catalytic performance. Hence, the lateral epitaxial growth of M-S Sn x Mo1- x S2/MoS2 heterostructure is precisely prepared with in situ growth of metallic Sn x Mo1- x S2 by doping Sn atoms at semiconductor MoS2 edge via one-step chemical vapor deposition. The atomically sharp interface of this heterostructure exhibits clearly distinguished performance based on a series of characterizations. The oxygen evolution photoelectrocatalytic performance of the epitaxial M-S heterostructure is 2.5 times higher than that of pure MoS2 in microreactor, attributed to the efficient electron-hole separation and rapid charge transfer. This growth method provides a general strategy for fabricating seamless M-S lateral heterostructures by controllable doping heteroatoms. The M-S heterostructures show increased carrier migration rate and eliminated Fermi level pinning effect, contributing to their potential in devices and catalytic system.
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