Abstract:Sputtering targets of CIGS quaternary ceramic were fabricated by hot-press sintering the milled powder mixture of Cu2Se, In2Se3 and Ga2Se3. When the milling time of the powders less than 4 h, the sintered targets delaminated, while the delamination disappeared with the prolonging milling time. Therefore the physico-chemical changes of the powder mixture during the milling process and their influence on the delamination of the targets were investigated. The results indicate that with the progress of the milling process, mechanical alloying (MA) occurred, and chalcopyrite Cu(In, Ga)Se2 (CIGS) formed from Cu2Se, In2Se3 and Ga2Se3; With the increasing milling time, CuInSe2 (CIS) formed on the surface of binary copper selenide firstly and CIGS was subsequently generated due to the inward diffusion of Ga; Thus the original blend powders became a mixture of CIGS and residual Ga2Se3 after milling for 48 h. Since CIGS and Cu2-xSe have a similar crystallographic structure, therefore this epitaxial relation may facilitate the formation of CIGS. The disappearance of Cu-Se binary compound and the formation of CIGS restrained the delamination of the CIGS targets in the sintering process.

Structure and Conductivity of Cu(In0.7Ga0.3)Se-2 Target Processed by Spark Plasma Sintering

Preparation and performances of high density Cu(In, Ga)Se3 ceramic targets

An Investigation on Preparation of CIGS Targets by Sintering Process

Synthesis and Characterization of CIGS Powder

Fabrication of Se-rich Cu(In1-XGaX)Se2 Quaternary Ceramic Target

Influences of Na on Sintering of Cu(In, Ga)Se-2 Quaternary Ceramic Targets

The Relationships Between Electronic Properties and Microstructure of Cu(In,Ga)Se-2 Films Prepared by Sputtering from A Quaternary Target

Effects of Substrate Temperature on the Properties of Cu(In,Ga)Se2 Thin Films Prepared by Sputtering from a Quaternary Target

Solvothermal Synthesis of Copper Indium Gallium Selenide Powder

Preparation of Cu(In,Ga)Se2 Thin Film by Sputtering from Cu(In,Ga)Se2 Quaternary Target

The Formation Mechanism of Cu(In0.7Ga0.3)Se-2 Nanoparticles and the Densification Trajectory of the Se-Rich Quaternary Target by Hot Pressing

Reaction Mechanism of Cu(In, Ga)Se2 Formation During Milling Process of Powder Mixture of Cu2Se, In2Se3 and Ga2Se3

PROCESS AND PERFORMANCE OF CHALCOPYRITE CIGSe ABSORBERS FABRICATED BY MAGNETRON SPUTTERING

A study on mechanisms of Sb-doping induced grain growth for Cu(InGa)Se2 absorbers deposited from quaternary targets

Mechanism Investigation of Sb-doping Induced Large-Grain Cu(InGa)Se2 Films Processed from Quaternary Targets

Surface evolution of sputtered Cu(In,Ga)Se 2 thin films under various annealing temperatures

Effects of Sb-doping on the grain growth of Cu(In, Ga)Se2 thin films fabricated by means of single-target sputtering

Influences of Ga Concentration on Performances of CuInGaSe2 Cells Fabricated by Sputtering-Based Method with Ceramic Quaternary Target

Preparation And Characterization Of Cu(In,Ga)Se-2 Thin Films By Selenization Of Cu0.8ga0.2 And In2se3 Precursor Films

Influences of Sulfurization on Performances of Cu(In,Ga)(Se,S)2 Cells Fabricated Based on the Method of Sputtering CIGSe Quaternary Target

Fabrication of Cu(In,Ga)Se-2 Thin Films from Nanoparticles by Non-Vacuum Mechanochemical Method and Rapid Thermal Annealing Process