The Defluorination of SiF4 on Si (1 1 1) Surfaces: a Density Functional Theory Study
Deju Wei,Qishan Huan,Shiyun Tang,Junjiang Guo,Lijun Chen,Hexin Tian,Yuhan Zhao,Anjiang Tang
DOI: https://doi.org/10.1007/s12633-021-01595-2
IF: 3.4
2022-01-27
Silicon
Abstract:In this paper, the defluorination of SiF4 on Si (1 1 1) surface are studied by adopting density functional theory calculation. SiF4 defluorination on Si (1 1 1) surface will undergo a four-step reaction: (1) SiF4 ↔ SiF3 + F, (2) SiF3 ↔ SiF2 + F, (3) SiF2 ↔ SiF + F, and (4) SiF ↔ Si + F. The results show that SiF3 and F tend to adsorb at the T site, SiF tend to adsorb at the FCC site, while Si and SiF2 tend to adsorb at the HCP site. Then, the stable co-adsorbed configurations of SiFn (n = 0 ~ 3) and F are obtained. Further, the kinetic results of SiF4 defluorination show that on Si (1 1 1) surface, SiF3 is the most abundant specie, which is consistent with the experimental results.
materials science, multidisciplinary,chemistry, physical