Wafer-scale Two-dimensional Ferromagnetic Fe 3 GeTe 2 Thin Films Grown by Molecular Beam Epitaxy

Shanshan Liu,Xiang Yuan,Yichao Zou,Yu Sheng,Ce Huang,Enze Zhang,Jiwei Ling,Yanwen Liu,Weiyi Wang,Cheng Zhang,Jin Zou,Kaiyou Wang,Faxian Xiu

DOI: https://doi.org/10.1038/s41699-017-0033-3

IF: 10.516

2017-01-01

npj 2D Materials and Applications

Abstract:A correction to this article has been published and is linked from the HTML version of this article.

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Author correction: Wafer-scale two-dimensional ferromagnetic Fe3GeTe2 thin films grown by molecular beam epitaxy

Shanshan Liu,Xiang Yuan,Yichao Zou,Yu Sheng,Ce Huang,Enze Zhang,Jiwei Ling,Yanwen Liu,Weiyi Wang,Cheng Zhang,Jin Zou,Kaiyou Wang,Faxian Xiu

DOI: https://doi.org/10.1038/s41699-017-0039-x

IF: 10.516

2017-10-25

npj 2D Materials and Applications

Abstract:A correction to this article has been published and is linked from the HTML version of this article.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Wafer-scale two-dimensional ferromagnetic Fe3GeTe2 thin films grown by molecular beam epitaxy

Shanshan Liu,Xiang Yuan,Yichao Zou,Yu Sheng,Ce Huang,Enze Zhang,Jiwei Ling,Yanwen Liu,Weiyi Wang,Cheng Zhang,Jin Zou,Kaiyou Wang,Faxian Xiu

DOI: https://doi.org/10.1038/s41699-017-0033-3

IF: 10.516

2017-09-14

npj 2D Materials and Applications

Abstract:Recently, layered two-dimensional ferromagnetic materials (2D FMs) have attracted a great deal of interest for developing low-dimensional magnetic and spintronic devices. Mechanically exfoliated 2D FMs were discovered to possess ferromagnetism down to monolayer. It is therefore of great importance to investigate the distinct magnetic properties at low dimensionality. Here, we report the wafer-scale growth of 2D ferromagnetic thin films of Fe3GeTe2 via molecular beam epitaxy, and their exotic magnetic properties can be manipulated via the Fe composition and the interface coupling with antiferromagnetic MnTe. A 2D layer-by-layer growth mode has been achieved by in situ reflection high-energy electron diffraction oscillations, yielding a well-defined interlayer distance of 0.82 nm along {002} surface. The magnetic easy axis is oriented along c-axis with a Curie temperature of 216.4 K. Remarkably, the Curie temperature can be enhanced when raising the Fe composition. Upon coupling with MnTe, the coercive field dramatically increases 50% from 0.65 to 0.94 Tesla. The large-scale layer-by-layer growth and controllable magnetic properties make Fe3GeTe2 a promising candidate for spintronic applications. It also opens up unprecedented opportunities to explore rich physics when coupled with other 2D superconductors and topological matters.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Above Room-Temperature Ferromagnetism in Wafer-Scale Two-Dimensional van der Waals Fe 3 GeTe 2 Tailored by a Topological Insulator

Haiyu Wang,Yingjie Liu,Peichen Wu,Wenjie Hou,Yuhao Jiang,Xiaohui Li,Chandan Pandey,Dongdong Chen,Qing Yang,Hangtian Wang,Dahai Wei,Na Lei,Wang Kang,Lianggong Wen,Tianxiao Nie,Weisheng Zhao,Kang L. Wang

DOI: https://doi.org/10.1021/acsnano.0c03152

IF: 17.1

2020-07-20

ACS Nano

Abstract:The emerging two-dimensional ferromagnetic materials present atomic layer thickness and a perfect interface feature, which have become an attractive research direction in the field of spintronics for low power and deep nanoscale integration. However, it has been proven to be extremely challenging to achieve a room-temperature ferromagnetic candidate with well controlled dimensionality, large-scale production, and convenient heterogeneous integration. Here, we report the growth of wafer-scale two-dimensional Fe3GeTe2 integrated with a topological insulator of Bi2Te3 by molecular beam epitaxy, which shows a Curie temperature (Tc) up to 400 K with perpendicular magnetic anisotropy. Dimensionality-dependent magnetic and magnetotransport measurements find that Tc increases with decreasing Fe3GeTe2 thickness in the heterostructures, indicating an interfacial engineering effect from Bi2Te3. The theoretical calculation further proves that the interfacial exchange coupling could significantly enhance the intralayer spin interaction in Fe3GeTe2, hence giving rise to a higher Tc. Our results provide great potential for the implementation of high-performance spintronic devices based on two-dimensional ferromagnetic materials.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsnano.0c03152?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsnano.0c03152</a>.Additional experimental details including XRD scan of Bi2Te3, FGT, Bi2Te3|FGT films, Hall measurement of 30 nm thick FGT, magnetic measurement of the Bi2Te3(8)|FGT(5) heterostructure, Hall measurement of the Bi2Te3|FGT heterostructures below 220 K, magnetic measurement of the FGT(2) and Bi2Te3(8)|FGT(20) heterostructures, and detailed theoretical calculation of the Bi2Te3|FGT heterostructures (<a class="ext-link" href="/doi/suppl/10.1021/acsnano.0c03152/suppl_file/nn0c03152_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

materials science, multidisciplinary,chemistry, physical,nanoscience & nanotechnology
Magnetic Properties of Layered Itinerant Electron Ferromagnet Fe3GeTe2

Bin Chen,JinHu Yang,HangDong Wang,Masaki Imai,Hiroto Ohta,Chishiro Michioka,Kazuyoshi Yoshimura,MingHu Fang

DOI: https://doi.org/10.7566/jpsj.82.124711

2013-01-01

Journal of the Physical Society of Japan

Abstract:We have successfully synthesized a single-crystal sample of the layered structure ferromagnet Fe3GeTe2 and present the results of its complete characterization using powder X-ray diffraction (XRD), magnetic susceptibility chi(T), isotherm magnetization M(H), specific heat C(T), and electrical resistivity rho(T) measurements. The rietveld refinement of the powder XRD data confirms that Fe3GeTe2 crystallizes in the space group p6(3)/mmc. The chi(T), C(T), and rho(T) data indicate bulk ferromagnetic ordering at T-C = 220 K with a saturation moment of 1.625 mu(B)/Fe at zero temperature. The magnetic measurements of the external magnetic field H applied along the c-axis and ab-plane show a large anisotropy in this material. We found that the modified Arrott plot (M-4-H/M) rather than the M-2-H/M plot is obeyed in this material. The generalized Rhodes-Wohlfarth ratio indicates an itinerant magnetism in this material. The spin fluctuation parameters are estimated and the magnetic properties are discussed in the framework of the self-consistent renormalization (SCR) and Takahashi theory of spin fluctuations.
Mechanism of Thermodynamically Rationalized Selective Growth of a Two-Dimensional Ternary Ferromagnet on Insulating Substrates

Xiaoshu Gong,Qiang Li,Ruikang Dong,Jinlan Wang,Liang Ma

DOI: https://doi.org/10.1021/acs.jpclett.4c02699

IF: 6.888

2024-10-25

The Journal of Physical Chemistry Letters

Abstract:Two-dimensional (2D) semiconducting ferromagnet Fe(3)GeTe(2) holds great promise for advanced spintronic applications because of its gate-tunable ferromagnetic ordering at room temperature, whereas the controllable growth of large-area single crystals remains very challenging due to its ternary nature and variable stoichiometry inducing many competitive phases. Here, we theoretically probe the mechanism of selective growth of monolayer Fe(3)GeTe(2) on various epitaxial substrates. Thermodynamic...

chemistry, physical,physics, atomic, molecular & chemical,nanoscience & nanotechnology,materials science, multidisciplinary
Unraveling the electronic structure and magnetic transition evolution across monolayer, bilayer, and multilayer ferromagnetic Fe 3 GeTe 2

R. Roemer,D. H. D. Lee,S. Smit,X. Zhang,S. Godin,V. Hamza,T. Jian,J. Larkin,H. Shin,C. Liu,M. Michiardi,G. Levy,Z. Zhang,R. J. Green,C. Kim,D. Muller,A. Damascelli,M. J. Han,K. Zou

DOI: https://doi.org/10.1038/s41699-024-00499-0

IF: 10.516

2024-09-30

npj 2D Materials and Applications

Abstract:Two-dimensional (2D) van der Waals (vdW) magnets have sparked widespread attention due to their potential in spintronic applications as well as in fundamental physics. Ferromagnetic vdW compound Fe 3 GeTe 2 (FGT) and its Ga variants have garnered significant interest due to their itinerant magnetism, correlated states, and high magnetic transition temperature. Experimental studies have demonstrated the tunability of FGT's Curie temperature, T C , through adjustments in quintuple layer numbers (QL) and carrier concentrations, n . However, the underlying mechanism remains elusive. In this study, we employ molecular beam epitaxy (MBE) to synthesize 2D FGT films down to 1 QL with precise layer control, facilitating an exploration of the band structure and the evolution of itinerant carrier density. Angle-resolved photoemission spectroscopy (ARPES) reveals significant band structure changes at the ultra-thin limit, while first-principles calculations elucidate the band evolution from 1 QL to bulk, largely governed by interlayer coupling. Additionally, we find that n is intrinsically linked to the number of QL and temperature, with a critical value triggering the magnetic phase transition. Our findings underscore the pivotal role of band structure and itinerant electrons in governing magnetic phase transitions in such 2D vdW magnetic materials.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Two-dimensional Ferromagnetic Superlattices.

Shanshan Liu,Ke Yang,Wenqing Liu,Enze Zhang,Zihan Li,Xiaoqian Zhang,Zhiming Liao,Wen Zhang,Jiabao Sun,Yunkun Yang,Han Gao,Ce Huang,Linfeng Ai,Ping Kwan Johnny Wong,Andrew Thye Shen Wee,Alpha T. N'Diaye,Simon A. Morton,Xufeng Kou,Jin Zou,Yongbing Xu,Hue Wu,Faxian Xiu

DOI: https://doi.org/10.1093/nsr/nwz205

IF: 20.6

2019-01-01

National Science Review

Abstract:Mechanically exfoliated two-dimensional ferromagnetic materials (2D FMs) possess long-range ferromagnetic order and topologically nontrivial skyrmions in few layers. However, because of the dimensionality effect, such few-layer systems usually exhibit much lower Curie temperature (T-C) compared to their bulk counterparts. It is therefore of great interest to explore effective approaches to enhance their T-C, particularly in wafer-scale for practical applications. Here, we report an interfacial proximity-induced high-T-C 2D FM Fe3GeTe2 (FGT) via A-type antiferromagnetic material CrSb (CS) which strongly couples to FGT. A superlattice structure of (FGT/CS)(n), where n stands for the period of FGT/CS heterostructure, has been successfully produced with sharp interfaces by molecular-beam epitaxy on 2-inch wafers. By performing elemental specific X-ray magnetic circular dichroism (XMCD) measurements, we have unequivocally discovered that T-C of 4-layer Fe3GeTe2 can be significantly enhanced from 140 K to 230 K because of the interfacial ferromagnetic coupling. Meanwhile, an inverse proximity effect occurs in the FGT/CS interface, driving the interfacial antiferromagnetic CrSb into a ferrimagnetic state as evidenced by double-switching behavior in hysteresis loops and the XMCD spectra. Density functional theory calculations show that the Fe-Te/Cr-Sb interface is strongly FM coupled and doping of the spin-polarized electrons by the interfacial Cr layer gives rise to the T-C enhancement of the Fe3GeTe2 films, in accordance with our XMCD measurements. Strikingly, by introducing rich Fe in a 4-layer FGT/CS superlattice, T-C can be further enhanced to near room temperature. Our results provide a feasible approach for enhancing the magnetic order of few-layer 2D FMs in wafer-scale and render opportunities for realizing realistic ultra-thin spintronic devices.
Two-dimensional itinerant ferromagnetism in atomically thin Fe3GeTe2

Zaiyao Fei,Bevin Huang,Paul Malinowski,Wenbo Wang,Tiancheng Song,Joshua Sanchez,Wang Yao,Di Xiao,Xiaoyang Zhu,Andrew F. May,Weida Wu,David H. Cobden,Jiun-Haw Chu,Xiaodong Xu

DOI: https://doi.org/10.1038/s41563-018-0149-7

IF: 41.2

2018-08-13

Nature Materials

Abstract:Discoveries of intrinsic two-dimensional (2D) ferromagnetism in van der Waals (vdW) crystals provide an interesting arena for studying fundamental 2D magnetism and devices that employ localized spins1–4. However, an exfoliable vdW material that exhibits intrinsic 2D itinerant magnetism remains elusive. Here we demonstrate that Fe3GeTe2 (FGT), an exfoliable vdW magnet, exhibits robust 2D ferromagnetism with strong perpendicular anisotropy when thinned down to a monolayer. Layer-number-dependent studies reveal a crossover from 3D to 2D Ising ferromagnetism for thicknesses less than 4 nm (five layers), accompanied by a fast drop of the Curie temperature (TC) from 207 K to 130 K in the monolayer. For FGT flakes thicker than ~15 nm, a distinct magnetic behaviour emerges in an intermediate temperature range, which we show is due to the formation of labyrinthine domain patterns. Our work introduces an atomically thin ferromagnetic metal that could be useful for the study of controllable 2D itinerant ferromagnetism and for engineering spintronic vdW heterostructures5.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter
Gate-tunable room-temperature ferromagnetism in two-dimensional Fe3GeTe2

Yujun Deng,Yijun Yu,Yichen Song,Jingzhao Zhang,Nai Zhou Wang,Zeyuan Sun,Yangfan Yi,Yi Zheng Wu,Shiwei Wu,Junyi Zhu,Jing Wang,Xian Hui Chen,Yuanbo Zhang

DOI: https://doi.org/10.1038/s41586-018-0626-9

IF: 64.8

2018-10-22

Nature

Abstract:Materials research has driven the development of modern nano-electronic devices. In particular, research in magnetic thin films has revolutionized the development of spintronic devices1,2 because identifying new magnetic materials is key to better device performance and design. Van der Waals crystals retain their chemical stability and structural integrity down to the monolayer and, being atomically thin, are readily tuned by various kinds of gate modulation3,4. Recent experiments have demonstrated that it is possible to obtain two-dimensional ferromagnetic order in insulating Cr2Ge2Te6 (ref. 5) and CrI3 (ref. 6) at low temperatures. Here we develop a device fabrication technique and isolate monolayers from the layered metallic magnet Fe3GeTe2 to study magnetotransport. We find that the itinerant ferromagnetism persists in Fe3GeTe2 down to the monolayer with an out-of-plane magnetocrystalline anisotropy. The ferromagnetic transition temperature, Tc, is suppressed relative to the bulk Tc of 205 kelvin in pristine Fe3GeTe2 thin flakes. An ionic gate, however, raises Tc to room temperature, much higher than the bulk Tc. The gate-tunable room-temperature ferromagnetism in two-dimensional Fe3GeTe2 opens up opportunities for potential voltage-controlled magnetoelectronics7–11 based on atomically thin van der Waals crystals.

multidisciplinary sciences
Substrate-modulated Ferromagnetism of Two-Dimensional Fe3GeTe2

Luman Zhang,Luyao Song,Hongwei Dai,Jun-Hui Yuan,Mingshan Wang,Xinyu Huang,Lei Qiao,Hui Cheng,Xia Wang,Wei Ren,Xiangshui Miao,Lei Ye,Kan-Hao Xue,Jun-Bo Han

DOI: https://doi.org/10.1063/1.5142077

IF: 4

2020-01-01

Applied Physics Letters

Abstract:We systematically investigated the modulation effects of substrates on the ferromagnetism properties of Fe3GeTe2 experimentally and theoretically. The polar refractive magnetic circular dichroism results demonstrate that the ferromagnetism could be modulated significantly by selecting different substrates. We explain this phenomenon using the first-principles calculation, revealing that it was induced by the lattice distortion and charge redistribution between the interfaces. Our work is useful to understand the fundamental mechanism of tunable ferromagnetism and paves the way for exploring interface physics and practical spintronic applications of two-dimensional ferromagnetic van der Waals crystals.
Superconducting four-fold Fe(Te,Se) film on six-fold magnetic MnTe via hybrid symmetry epitaxy

Xiong Yao,Alessandro R. Mazza,Myung-Geun Han,Hee Taek Yi,Deepti Jain,Matthew Brahlek,Seongshik Oh

DOI: https://doi.org/10.1021/acs.nanolett.2c02510

2022-08-30

Abstract:Epitaxial Fe(Te,Se) thin films have been grown on various substrates but never been realized on magnetic layers. Here we report the epitaxial growth of four-fold Fe(Te,Se) film on a six-fold antiferromagnetic insulator, MnTe. The Fe(Te,Se)/MnTe heterostructure shows a clear superconducting transition at around 11 K and the critical magnetic field measurement suggests the origin of the superconductivity to be bulk-like. Structural characterizations suggest that the uniaxial lattice match between Fe(Te,Se) and MnTe allows a hybrid symmetry epitaxy mode, which was recently discovered between Fe(Te,Se) and Bi2Te3. Furthermore, Te/Fe flux ratio during deposition of the Fe(Te,Se) layer is found to be critical for its superconductivity. Now that superconducting Fe(Te,Se) can be grown on two related hexagonal platforms, Bi2Te3 and MnTe, this result opens a new possibility of combining topological superconductivity of Fe(Te,Se) with the rich physics in the intrinsic magnetic topological materials (MnTe)n(Bi2Te3)m family.

Superconductivity
Ferromagnetism of sputtered Fe3GeTe2 ultrathin films in the absence of two-dimensional crystalline order

Qianwen Zhao,ChaoChao Xia,Hanying Zhang,Baiqing Jiang,Tunan Xie,Kaihua Lou,Chong Bi

DOI: https://doi.org/10.48550/arXiv.2302.00553

2023-02-01

Materials Science

Abstract:The discovery of ferromagnetism in two-dimensional (2D) monolayers has stimulated growing research interest in both spintronics and material science. However, these 2D ferromagnetic layers are mainly prepared through an incompatible approach for large-scale fabrication and integration, and moreover, a fundamental question whether the observed ferromagnetism actually correlates with the 2D crystalline order has not been explored. Here, we choose a typical 2D ferromagnetic material, Fe3GeTe2, to address these two issues by investigating its ferromagnetism in an amorphous state. We have fabricated nanometer-thick amorphous Fe3GeTe2 films approaching the monolayer thickness limit of crystallized Fe3GeTe2 (0.8 nm) through magnetron sputtering. Compared to crystallized Fe3GeTe2, we found that the basic ferromagnetic attributes, such as the Curie temperature that directly reflects magnetic exchange interactions and local anisotropic energy, do not change significantly in the amorphous states. This is attributed to that the short-range atomic order, as confirmed by valence state analysis, is almost the same for both phases. The persistence of ferromagnetism in the ultrathin amorphous counterpart has also been confirmed through magnetoresistance measurements, where two unconventional switching dips arising from electrical transport within domain walls are clearly observed in the amorphous Fe3GeTe2 single layer. These results indicate that the long-range ferromagnetic order of crystallized Fe3GeTe2 may not correlate to the 2D crystalline order and the corresponding ferromagnetic attributes can be utilized in an amorphous state which suits large-scale fabrication in a semiconductor technology-compatible manner for spintronics applications.
Significant enhancement of ferromagnetism above room temperature in epitaxial 2D van der Waals ferromagnet Fe5- δGeTe2/Bi2Te3 heterostructures

E Georgopoulou-Kotsaki,P Pappas,A Lintzeris,P Tsipas,S Fragkos,A Markou,C Felser,E Longo,M Fanciulli,R Mantovan,F Mahfouzi,N Kioussis,A Dimoulas

DOI: https://doi.org/10.1039/d2nr04820e

IF: 6.7

2023-02-02

Nanoscale

Abstract:Two-dimensional (2D) van der Waals (vdW) ferromagnetic metals FexGeTe2 with x = 3-5 have raised significant interest in the scientific community. Fe5GeTe2 shows prospects for spintronic applications since the Curie temperature Tc has been reported near or higher than 300 K. In the present work, epitaxial Fe5-δGeTe2 (FGT) heterostructures were grown by Molecular Beam Epitaxy (MBE) on insulating crystalline substrates. The FGT films were combined with Bi2Te3 topological insulator (TI) aiming to investigate the possible beneficial effect of the TI on the magnetic properties of FGT. FGT/Bi2Te3 films were compared to FGT capped only with AlOx to prevent oxidation. SQUID and MOKE measurements revealed that the growth of Bi2Te3 TI on FGT films significantly enhances the saturation magnetization of FGT as well as the Tc well above room temperature (RT) reaching record values of 570 K. First-principles calculations predict a shift of the Fermi level and an associated enhancement of the majority spin (primarily) as well as the total density of states at the Fermi level suggesting that effective doping of FGT from Bi2Te3 could explain the enhancement of ferromagnetism in FGT. It is also predicted that strain induced stabilization of a high magnetic moment phase in FGT/Bi2Te3 could be an alternative explanation of magnetization and Tc enhancement. Ferromagnetic resonance measurements evidence an enhanced broadening in the FGT/Bi2Te3 heterostructure when compared to FGT. We obtain a large spin mixing conductance of g↑↓eff = 4.4 × 1020 m-2, which demonstrates the great potential of FGT/Bi2Te3 systems for spin-charge conversion applications at room temperature.
Centimeter-scale above room temperature ferromagnetic Fe 3 GaTe 2 thin films by molecular beam epitaxy

Taikun WANG,Yongkang XU,Yu LIU,Xingze DAI,Pengfei YAN,Jin WANG,Shuanghai WANG,Yafeng DENG,Kun HE,Caitao LI,Ziang WANG,Wenqin ZOU,Rongji WEN,Yufeng HAO,Liang HE

DOI: https://doi.org/10.1088/0256-307x/41/10/107502

2024-09-11

Chinese Physics Letters

Abstract:Fe 3 GaTe 2 , as a layered ferromagnetic material, has a Curie temperature (T c ) higher than room temperature, making it the key material in the next generation of spintronic devices. To be used in practical devices, large-size and high-quality Fe 3 GaTe 2 thin films need to be prepared. Here, the centimeter-scale thin film samples with high crystal quality and above room temperature ferromagnetism with strong perpendicular magnetic anisotropy (PMA) have been prepared by molecular beam epitaxy technology. Furthermore, the T c of the samples raises as the film thickness increases, and reaches 367 K when the film thickness is 60 nm. This study provides material foundations for the new generation of van der Waals spintronic devices and paves the way for the commercial application of Fe 3 GaTe 2 .

physics, multidisciplinary
Centimeter-scale above Room Temperature Ferromagnetic Fe3GaTe2 Thin Films by Molecular Beam Epitaxy

Taikun Wang,Yongkang Xu,Yu Liu,Xingze Dai,Pengfei Yan,Jin Wang,Shuanghai Wang,Yafeng Deng,Kun He,Caitao Li,Ziang Wang,Wenqin Zou,Rongji Wen,Yufeng Hao,Liang He

DOI: https://doi.org/10.1088/0256-307x/41/10/107502

2024-01-01

Chinese Physics Letters

Abstract:Fe3GaTe2,as a layered ferromagnetic material,has a Curie temperature(Tc)higher than room temperature,making it the key material in next-generation spintronic devices.To be used in practical devices,large-sized high-quality Fe3GaTe2 thin films need to be prepared.Here,the centimeter-scale thin film samples with high crystal quality and above-room-temperature ferromagnetism with strong perpendicular magnetic anisotropy were prepared by molecular beam epitaxy technology.Furthermore,the Tc of the samples raises as the film thickness increases,and reaches 367 K when the film thickness is 60 nm.This study provides material foundations for the new generation of van der Waals spintronic devices and paves the way for the commercial application of Fe3GaTe2.
Tuning 2D magnetism in Fe3+XGeTe2 films by element doping

Shanshan Liu,Zihan Li,Ke Yang,Enze Zhang,Awadhesh Narayan,Xiaoqian Zhang,Jiayi Zhu,Wenqing Liu,Zhiming Liao,Masaki Kudo,Takaaki Toriyama,Yunkun Yang,Qiang Li,Linfeng Ai,Ce Huang,Jiabao Sun,Xiaojiao Guo,Wenzhong Bao,Qingsong Deng,Yanhui Chen,Lifeng Yin,Jian Shen,Xiaodong Han,Syo Matsumura,Jin Zou,Yongbing Xu,Xiaodong Xu,Hua Wu,Faxian Xiu

DOI: https://doi.org/10.1093/nsr/nwab117

IF: 20.6

2021-07-02

National Science Review

Abstract:Abstract Two-dimensional (2D) ferromagnetic materials have been discovered with tunable magnetism and orbital-driven nodal-line features. Controlling the 2D magnetism in exfoliated nanoflakes via electric/magnetic fields enables the boosted Curie temperature (TC) or phase transitions. One of the challenges, however, is the realization of high TC 2D magnets that are tunable, robust and suitable for large scale fabrication. Here, we report molecular-beam epitaxy growth of wafer-scale Fe3+XGeTe2 films with TC above-room-temperature. By controlling the Fe composition in Fe3+XGeTe2, a continuously-modulated TC in a broad range of 185–320 K has been achieved. This widely tunable TC is attributed to the doped interlayer Fe that provide a 40% enhancement around the optimal composition X = 2. We further fabricated magnetic tunneling junction device arrays that exhibit clear tunneling signals. Our results show an effective and reliable approach, i.e. element doping, to produce robust and tunable ferromagnetism beyond room temperature in a large-scale 2D Fe3+XGeTe2 fashion.

multidisciplinary sciences
Scanning Tunneling Microscopy Study of Epitaxial Fe3GeTe2 Monolayers on Bi2Te3

Brad M. Goff,Alexander J. Bishop,Wenyi Zhou,Ryan Bailey-Crandell,Katherine Robinson,Roland K. Kawakami,Jay A. Gupta

DOI: https://doi.org/10.1088/2053-1583/ad1c6d

2023-11-20

Abstract:Introducing magnetism to the surface state of topological insulators, such as Bi2Te3, can lead to a variety of interesting phenomena. We use scanning tunneling microscopy (STM) to study a single quintuple layer (QL) of the van der Waals magnet Fe3GeTe2 (FGT) that is grown on Bi2Te3 via molecular beam epitaxy. STM topographic images show that the FGT grows as free-standing islands on Bi2Te3 and outwards from Bi2Te3 steps. Atomic resolution imaging shows atomic lattices of 390 +- 10 pm for FGT and 430 +- 10 pm for Bi2Te3, consistent with the respective bulk crystals. A moiré pattern is observed on FGT regions with a periodicity of 4.3 +- 0.4 nm that can be attributed solely to this lattice mismatch and thus indicates zero rotational misalignments. While most of the surface is covered by a single QL of the FGT, there are small double QL regions, as well as regions with distinct chemical terminations due to an incomplete QL. The most common partial QL surface termination is the FeGe layer, in which the top two atomic layers are missing. This termination has a distinctive electronic structure and a (sqrt3 x sqrt3)R30 reconstruction overlaid on the moiré pattern in STM images. Magnetic circular dichroism (MCD) measurements confirm these thin FGT films are ferromagnetic with TC ~190 K.

Materials Science
Layer-Number-Dependent Magnetism and Anomalous Hall Effect in Van Der Waals Ferromagnet Fe5GeTe2

Yazhou Deng,Ziji Xiang,Bin Lei,Kejia Zhu,Haimen Mu,Weizhuang Zhuo,Xiangyu Hua,Mingjie Wang,Zhengfei Wang,Guopeng Wang,Mingliang Tian,Xianhui Chen

DOI: https://doi.org/10.1021/acs.nanolett.2c02696

IF: 10.8

2022-01-01

Nano Letters

Abstract:Realization of ferromagnetism in the two-dimensional (2D) van der Waals (vdW) crystals opens up a vital route to understand the magnetic ordering in the 2D limit and to design novel spintronics. Here, we report enriched layer-number-dependent magnetotransport properties in the vdW ferromagnet Fe5GeTe2. By studying the magnetoresistance and anomalous Hall effect (AHE) in nanoflakes with thicknesses down to monolayer, we demonstrate that while the bulk crystals exhibit soft ferromagnetism with an in-plane magnetic anisotropy, hard ferromagnetism develops upon thinning, and a perpendicular easy-axis anisotropy is realized in bilayer flakes, which is accompanied by a pronounced enhancement of AHE because of extrinsic mechanisms. For the monolayer flakes, the hard ferromagnetism is replaced by spin-glass-like behavior, in accordance with the localization effect in the 2D limit. Our results highlight the thickness-based tunability of the magnetotransport properties in the atomically thin vdW magnets that promises engineering of high-performance spintronic devices.
Author Correction: Anisotropic magnetocaloric effect in Fe 3− x GeTe 2

Yu Liu,Jun Li,Jing Tao,Yimei Zhu,Cedomir Petrovic

DOI: https://doi.org/10.1038/s41598-020-58154-9

IF: 4.6

2020-01-01

Scientific Reports

Abstract:n amendment to this paper has been published and can be accessed via a link at the top of the paper.
High- T c Ferromagnetic Semiconductor in Thinned 3D Ising Ferromagnetic Metal Fe 3 GaTe 2

Zhaoxu Chen,Yuxin Yang,Tianping Ying,Jian-gang Guo

DOI: https://doi.org/10.1021/acs.nanolett.3c04462

IF: 10.8

2024-01-10

Nano Letters

Abstract:Emergent phenomena in exfoliated layered transition metal compounds have attracted much attention in the past several years. Especially, pursuing a ferromagnetic insulator is one of the exciting goals for stimulating a high-performance magnetoelectrical device. Here, we report the transition from a metallic to high-T(c) semiconductor-like ferromagnet in thinned Fe(3)GaTe(2), accompanied with competition among various magnetic interactions. As evidenced by critical exponents, Fe(3)GaTe(2) is the...

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology

Wafer-scale Two-dimensional Ferromagnetic Fe 3 GeTe 2 Thin Films Grown by Molecular Beam Epitaxy

Author correction: Wafer-scale two-dimensional ferromagnetic Fe3GeTe2 thin films grown by molecular beam epitaxy

Wafer-scale two-dimensional ferromagnetic Fe3GeTe2 thin films grown by molecular beam epitaxy

Above Room-Temperature Ferromagnetism in Wafer-Scale Two-Dimensional van der Waals Fe 3 GeTe 2 Tailored by a Topological Insulator

Magnetic Properties of Layered Itinerant Electron Ferromagnet Fe3GeTe2

Mechanism of Thermodynamically Rationalized Selective Growth of a Two-Dimensional Ternary Ferromagnet on Insulating Substrates

Unraveling the electronic structure and magnetic transition evolution across monolayer, bilayer, and multilayer ferromagnetic Fe 3 GeTe 2

Two-dimensional Ferromagnetic Superlattices.

Two-dimensional itinerant ferromagnetism in atomically thin Fe3GeTe2

Gate-tunable room-temperature ferromagnetism in two-dimensional Fe3GeTe2

Substrate-modulated Ferromagnetism of Two-Dimensional Fe3GeTe2

Superconducting four-fold Fe(Te,Se) film on six-fold magnetic MnTe via hybrid symmetry epitaxy

Ferromagnetism of sputtered Fe3GeTe2 ultrathin films in the absence of two-dimensional crystalline order

Significant enhancement of ferromagnetism above room temperature in epitaxial 2D van der Waals ferromagnet Fe5- δGeTe2/Bi2Te3 heterostructures

Centimeter-scale above room temperature ferromagnetic Fe 3 GaTe 2 thin films by molecular beam epitaxy

Centimeter-scale above Room Temperature Ferromagnetic Fe3GaTe2 Thin Films by Molecular Beam Epitaxy

Tuning 2D magnetism in Fe3+XGeTe2 films by element doping

Scanning Tunneling Microscopy Study of Epitaxial Fe3GeTe2 Monolayers on Bi2Te3

Layer-Number-Dependent Magnetism and Anomalous Hall Effect in Van Der Waals Ferromagnet Fe5GeTe2

Author Correction: Anisotropic magnetocaloric effect in Fe 3− x GeTe 2

High- T c Ferromagnetic Semiconductor in Thinned 3D Ising Ferromagnetic Metal Fe 3 GaTe 2