Self-assembled Semiconductor Quantum Dots Decorating the Facets of GaAs Nanowire for Single-Photon Emission

Ying Yu,Guo-Wei Zha,Xiang-Jun Shang,Shuang Yang,Ban-Quan Sun,Hai-Qiao Ni,Zhi-Chuan Niu
DOI: https://doi.org/10.1093/nsr/nwx042
IF: 20.6
2017-01-01
National Science Review
Abstract:In this chapter, we discuss the epitaxial growth of self-assembled quantum dots (QDs) in GaAs nanowires (NWs) and the characteristics of their single-photon emissions. We demonstrate Ga droplet-induced gold-free vapor-liquid-solid growth of hexagonal GaAs/AlGaAs core-shell NWs, branched GaAs NWs and tailored nanostructured morphologies on the NW facets. Particularly, we show two new types of QD-in-NW systems: one is a single InAs QD formed at the corner of a branched GaAs NW, and the other is a single GaAs QD formed on the NW facet. Sharp excitonic emission spectral lines are observed with vanishing two-photon emission probability. Furthermore, a single GaAs QD is achieved at the site of a single AlGaAs quantum ring (QR) on the NW facet. In addition, these NW-based single QDs are in-situ probed and integrated with single-mode optical fibers to achieve all-fiber-output single-photon sources for potential application in quantum integrated networks.
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