Ti4+ Doped Perovskite for Efficient Perovskite Solar Cells by Grain Boundary Passivation

Tian Hui,Xiong Qi,Liu Peng,Zhang Jing,Han Lei,Zhang Yu-Hao,Zheng Yong-Jin,Wu Li-Shuang,Zhu Yue-Jin
DOI: https://doi.org/10.11862/CJIC.201.8.200
2018-01-01
Chinese journal of inorganic chemistry
Abstract:The grain boundaries defect is solved by titanium ion (Ti4+) doping. Ti4+ has small radius which is proved to form at the grain boundary of polycrystalline perovskite. By control doping of titanium ion, grain size become more uniform, which leads to more continuous perovskite thin film. Studies suggest that the defects in grain boundary of polycrystalline perovskite are passivated by doping Ti4+, which results in the trap states concentration greatly decrease. And experimental test clearly exhibits more excellent performance of short-circuit current density (J(sc) = 22.3 mA.cm(-1)), open-circuit voltage (V-oc = 1.10 V), fill factor (FF=72.4%) and photovoltaic conversion efficiency (PCE=17.4%) with low amount TV4+ doping compared with pure planar heterojunction perovskite solar cells (AM1.5).
What problem does this paper attempt to address?