Abstract:Semiconductor heterojunctions play a crucial role in exploring novel physics and developing advanced devices. Due to the characteristic electronic band structure, such as the narrow bandgap and the large spin-orbital interaction, the Ⅳ-Ⅵ compound semiconductor heterojunctions are not only of great importance to infrared detectors, but also arouse extensively concern in the frontier fields of physics, like topological insulators (TIs) and spintronics. Most excitingly, the two-dimensional electron gas (2DGE) with high electron density and high mobility is revealed at the interface of the typical Ⅳ-Ⅵ compound semiconductor CdTe/PbTe heterojunction, the formation of which is attributed to the unique twisted interface of the Ⅳ-Ⅵ compound semiconductor heterojunctions. Further researches demonstrate that the 2DEG system boasts prominent infrared photoresponse and is of Dirac fermion nature. This review presents the major progress in Ⅳ-Ⅵ compound semiconductor heterojunction 2DEG in the past decades. First, the formation mechanism of the twisted heterojunction 2DEG is discussed based on both theoretical and experimental results. By molecular beam epitaxy the novel lattice-mismatch heterostructure CdTe/PbTe with sharp interface was obtained and first-principle calculations revealed that the alternately changed atomic layer spacing played a crucial role in the formation of 2DEG. High resolution transmission electron microscope image of the interface clearly demonstrated the twisted interfacial structure and showed that the interfacial Te-sharing bonding configuration provided the excessive electrons. Second, we show the transport properties of the 2DEG under the condition of low temperature and high magnetic field, and the unambiguous π Berry phase of quantum oscillations indicate that the 2DEG is of Dirac fermion nature and demonstrate its potential for realizing two-dimensional TI and spintronic device. Moreover, the 2DEG exhibits quite high mobility, making it candidate for high electron mobility transistor. At last, the high-performance mid-infrared photodetector is displayed, which is built based on the typical Ⅳ-Ⅵ compound semiconductor CdTe/PbTe heterojunction. The most exciting feature of the detector is that it is able to achieve high-speed response with satisfying detectivity while working at room temperature, which could be a complementation to state-of-art mid-infrared photodetectors. In summary, the Ⅳ-Ⅵ compound semiconductor heterojunctions are of great significance not only in fundamental physics but also in device applications, and this review could provide the researchers with the main results in the field.

Excellent Rectifying Characteristics and Large Photoresponse in Lateral Heterojunction Composed of YBa2Cu3O7-δ and Quasi-Two-dimensional Electron Gas at SrTiO3 Surface

Recent Progress on Ⅳ-Ⅵ Compound Semiconductor Heterojunction Two-Dimensional Electron Gas

Fully Optical Modulation of the Two-Dimensional Electron Gas at the Γ-Al2o3/srtio3 Interface.

Two-Dimensional Electron Gas at the Metastable Twisted Interfaces of Cdte/Pbte (111) Single Heterojunctions

Reconstruction of Electrostatic Field at the Interface Leads to Formation of Two-Dimensional Electron Gas at Multivalent (110) Laalo3/Srtio3 Interfaces

Room temperature large photoresponse in p-n heterojunction composed of WSe 2 and 2D electron gas at LaAlO 3 /KTaO 3 interface

WSe2/2D electron gas heterojunction on KTaO3 for room-temperature giant photoconductivity

High Mobility 2DEG in modulation-doped \b{eta}-(AlxGa1-x)2O3/Ga2O3 heterostructures

A two-dimensional electron gas based on a 5s oxide with high room-temperature mobility and strain sensitivity

High-mobility spin-polarized quasi-two-dimensional electron gas and large low-field magnetoresistance at the interface of EuTiO3/SrTiO3 (110) heterostructures

Dual Mechanism WS2‐WSe2 Lateral Monolayer Heterojunction Photodetector and Its Photoresponse Enhancement by Hybridizing with CsPbBr3 QDs

A two-dimensional electron gas based on a 5<i>s</i> oxide with high room-temperature mobility and strain sensitivity

Circular Photogalvanic Effect in Oxide Two-Dimensional Electron Gases

Giant Photoresponse in Quantized SrRuO3 Monolayer at Oxide Interfaces

Characteristic electronic structure and its doping evolution in lightly-doped to underdoped YBa2Cu3Oy

High valley-degeneracy electron gas at double perovskite - strontium titanate interface

High-mobility field-effect transistor using 2-dimensional electron gas at the LaScO3/BaSnO3 interface

Oxide tunnel junctions supporting a two-dimensional electron gas

High-Mobility Two-Dimensional Electron Gases at Oxide Interfaces: Origins and Opportunities

Direct observation of a two-dimensional hole gas at oxide interfaces