Abstract:Mechanistic studies on lead halide perovskites (LHPs) in recent years have suggested charge carrier screening as partially responsible for long carrier diffusion lengths and lifetimes that are key to superior optoelectronic properties. These findings have led to the ferroelectric large polaron proposal, which attributes efficient charge carrier screening to the extended ordering of dipoles from symmetry-breaking unit cells that undergo local structural distortion and break inversion symmetry. It remains an open question whether this proposal applies in general to semiconductors with LHP-like anharmonic and dynamically disordered phonons. Here, we study electron-phonon coupling in Bi2O2Se, a semiconductor which bears resemblance to LHPs in ionic bonding, spin-orbit coupling, band transport with long carrier diffusion lengths and lifetimes, and phonon disorder as revealed by temperature-dependent Raman spectroscopy. Using coherent phonon spectroscopy, we show the strong coupling of an anharmonic phonon mode at 1.50 THz to photo-excited charge carriers, while the Raman excitation of this mode is symmetry-forbidden in the ground-state. Density functional theory calculations show that this mode, originating from the A1g phonon of out-of-plane Bi/Se motion, gains oscillator strength from symmetry-lowering in polaron formation. Specifically, lattice distortion upon ultrafast charge localization results in extended ordering of symmetry-breaking unit cells and a planar polaron wavefunction, namely a two-dimensional polaron in a three-dimensional lattice. This study provides experimental and theoretical insights into charge interaction with anharmonic phonons in Bi2O2Se and suggests ferroelectric polaron formation may be a general principle for efficient charge carrier screening and for defect-tolerant semiconductors.

Optic-Phonon-Limited Mobility in A Polar Semiconductor

Hot-Electron Transport and Coupled-Mode Optic Phonon in A Polar Semiconductor

Second-order Perturbative Treatment for Confined Polarons in Low-Dimensional Polar Semiconductors

Transient Suppression of Carrier Mobility Due to Hot Optical Phonons in Lead Bromide Perovskites.

Significant suppression of phonon transport in polar semiconductors owing to electron-phonon-induced dipole coupling: An effect of breaking centrosymmetry

Interplay Between In-Plane and Flexural Phonons in Electronic Transport of Two-Dimensional Semiconductors

Phonon-limited Mobility in Two-Dimensional Semiconductors with Spin-Orbit Coupling

Polarons in semiconductor quantum-dots and their role in the quantum kinetics of carrier relaxation

LO-Phonon-Limited Electron Mobility in a Core-Shell Polar Semiconductor Quantum Wire

Phonon signatures for polaron formation in an anharmonic semiconductor

Mobility Anisotropy of Two-Dimensional Semiconductors

Ultrafast Carrier Dynamics Of Bi2o2se Nanoplates In The Nonlinear Excitation Regime

Phonon-Limited Electron Mobility in Single-Layer Mos2

Interaction Between an Electron and Optical Phonons in Polar Semiconductor Heterostructures

Behaviour of Polariton in a Simple Model

Analytic method for quadratic polarons in nonparabolic bands

Ultra‐Confined Phonon Polaritons and Strongly Coupled Microcavity Exciton Polaritons in Monolayer MoSi2N4 and WSi2N4

Hot-electron Energy-Loss Rate in Polar Semiconductors in a Two-Temperature Model

Renormalization of excitonic properties by polar phonons

Optical Phonons in Polar Semiconductor Nanowires

Nonlinear polaritons in a monolayer semiconductor coupled to optical bound states in the continuum