Abstract:Wide bandgap semiconductor nanostructures have been the research focus in recent years because of their unique physical and chemical properties and low electron affinity, which benefits for tunnel emission (Geis et al., 1991; Zhirnov et al., 1997; Kang et al., 2001; Liu et al., 2009). Among them, AlN nanostructures should deserve paid much attention due to their high melting-point (> 2300 oC), high thermal conductivity (K ~ 320 W/m·k), large exciton binding energy and strong endurance to harsh environment (Davis, 1991; Nicolaescu et al., 1994; Sheppard et al., 1990; Ponthieu et al., 1991). There have emerged many synthesis methods to fabricate different morphology of AlN nanostructures, such as nanocone, nanorod, and nanorods (Liu et al., 2009; Zhao et al., 2004; Liu et al., 2004; Tang et al., 2005; Shi et al., 2005, 2006; Wu et al., 2003; Paul et al., 2008). But for actual device applications of AlN nanostructures, there still exist many technique questions, which need to be solved as soon as possible. Firstly, the controlled growth of large area AlN nanostructures with uniform morphology is very difficult because of which cares about the uniformity of their physical properties in devices. Secondly, systemic investigation on the field emission (FE) properties of AlN nanostructures is not enough, which has fallen behind the development of the preparing method. Thirdly, it is unknown to us all that what factors take effect on their FE behaviors and how to find optimal growth conditions for their device applications. So developing a suitable way to controllably prepare AlN nanostructures and investigate on their FE properties in detail is essential for promoting their progress in FE area.

The Growth Methods and Field Emission Studies of Low-Dimensional Boron-Based Nanostructures

Field Emission Properties of Boron Nanostructures

Inorganic Boron-Based Nanostructures: Synthesis, Optoelectronic Properties, and Prospective Applications

Growth and Field Emission Performance of Micro-Patterned Boron Nanowire Arrays

From Highly Purified Boron Nitride to Boron Nitride‐Based Heterostructures: an Inorganic Precursor‐Based Strategy

Growth of Large-Scale Boron Nanowire Patterns with Identical Base-Up Mode and in Situ Field Emission Studies of Individual Boron Nanowire

Ultra-Low Threshold Field Emission from Amorphous Bn Nanofilms

An Easy Way to Controllably Synthesize One-Dimensional SmB6 Topological Insulator Nanostructures and Exploration of Their Field Emission Applications

One-Dimensional Boron Nanostructures: Prediction, Synthesis, Characterizations, and Applications

The Controlled Growth of Long AlN Nanorods and In-situ Investigation on Their Field Emission Properties

Probing Field Emission from Boron Carbide Nanowires

Synthesis and Field-Emission Behavior of Highly Oriented Boron Carbonitride Nanofibers

Effect of Contact Mode on the Electrical Transport and Field‐Emission Performance of Individual Boron Nanowires

Enhanced Electron Field Emission in B-doped Carbon Nanotubes

Carbon Nanotubes And Their Potential Field Emission Applications

Field-Emission Characteristics of Conical Boron Nitride Nanorods

Novel Nanostructured Carbon Nanotube Electron Sources

Carbon Nanotubes As Field Emission Sources

Enhanced Field Emission from a Carbon Nanotube Array Coated with a Hexagonal Boron Nitride Thin Film

Metal-like single crystalline boron nanotubes: synthesis and in situ study on electric transport and field emission properties

Nanomaterials for Field Electron Emission: Preparation, Characterization and Application.