Abstract:In recent studies, visible light communication (VLC) has been predicted to be a prospective technique in the future 6G communication systems. To suit the trend of exponentially growing connectivity, researchers have intensively studied techniques that enable multiple access (MA) in VLC systems, such as the MIMO system based on LED devices to support potential applications in the Internet of Things (IoT) or edge computing in the next-generation access network. However, their transmission rate is limited due to the intrinsic bandwidth of LED. Unfortunately, the majority of visible light laser communication (VLLC) research with beyond 10 Gb/s data rates concentrates on point-to-point links, or using discrete photodetector (PD) devices instead of an integrated array PD. In this paper, we demonstrated an integrated PD array device fabricated with a Si-substrated GaN/InGaN multiple-quantum-well (MQW) structure, which has a 4×4 array of 50 μm ×50 μm micro-PD units with a common cathode and anode. This single-integrated array successfully provides access for two different transmitters simultaneously in the experiment, implementing a 2×2 MIMO-VLLC link at 405 nm. The highest data rate achieved is 13.2 Gb/s, and the corresponding net data rate (NDR) achieved is 12.27 Gb/s after deducing the FEC overhead, using 2.2 GHz bandwidth and superposed PAM signals. Furthermore, we assess the Huffman-coded coding scheme, which brings a fine-grain adjustment in access capacity and enhances the overall data throughput when the user signal power varies drastically due to distance, weather, or other challenges in the channel condition. As far as we know, this is the first demonstration of multiple visible light laser source access based on a single integrated GaN/InGaN receiver module.

3.8-Gbit/s Visible Light Communication (VLC) Based on 443-Nm Superluminescent Diode and Bit-Loading Discrete-Multiple-tone (DMT) Modulation Scheme

High-Speed GaN-Based Superluminescent Diode for 4.57 Gbps Visible Light Communication

High‐Speed GaN‐Based 405 Nm Violet Superluminescent Diode with Tilted Facet for Visible Light Communications

High-Speed 405nm Violet Superluminescent Diode for 3.6 Gbps Visible Light Communication

46.4 Gbps Visible Light Communication System Utilizing a Compact Tricolor Laser Transmitter.

LED Based High-Speed Visible Light Communications

Key Technologies for High-Speed Si-substrate LED based Visible Light Communication

High-speed visible light communication systems based on Si-substrate LEDs with multiple superlattice interlayers

580-Nm-thick Vertical-Structure Light-Emitting Diode for Visible Light Communication

High-speed Visible Light Communication System Based on Superluminescent Diodes (Slds)

High-speed GaN-based Laser Diode with Modulation Bandwidth Exceeding 5 GHz for 20 Gbps Visible Light Communication

31.38 Gb/s GaN-based LED Array Visible Light Communication System Enhanced with V-pit and Sidewall Quantum Well Structure

High Speed Led Based Visible Light Communication Networks for Beyond 10gb/s Wireless Access

Group-III-Nitride Superluminescent Diodes for Solid-State Lighting and High-Speed Visible Light Communications

Si-substrate LEDs with Multiple Superlattice Interlayers for Beyond 24 Gbps Visible Light Communication

Flexible 2 × 2 Multiple Access Visible Light Communication System Based on an Integrated Parallel GaN/InGaN Micro-Photodetector Array Module

800Gbps Visible Light Communication System Employing WDM and OAM Multiplexing

A 15 Gbps 520-Nm GaN Laser Diode Based Visible Light Communication System Utilizing Adaptive Bit Loading Scheme

1.3 GHz E-O Bandwidth GaN-based Micro-Led for Multi-Gigabit Visible Light Communication

Flexible 2x2 Multiple Access Visible Light Communication System Based on an Integrated Parallel GaN/InGaN Micro-Photodetector Array Module

Experimental Investigation of 16.6 Gbps SDM-WDM Visible Light Communication Based on a Neural Network Receiver and Tricolor Mini-Leds.