Improved ammonia sensitivity and broadband photodetection by using PBTTT-C14/WS 2 -QDs nano-heterojunction based thin film transistor

Shipra Gupta,Bhola N. Pal,Rajiv Prakash
DOI: https://doi.org/10.1016/j.snb.2024.135872
IF: 9.221
2024-05-09
Sensors and Actuators B Chemical
Abstract:An ambient temperature broadband photo-detector and ammonia (NH 3 ) gas sensor devices are developed with PBTTT-C14/WS 2 -QDs heterojunction thin film. Gas and photo-sensitive semiconducting composite thin layer of PBTTT-C14 conjugate polymer and hydrothermally synthesized WS 2 -QDs have been deposited by high yield and cost-effective 'floating film transfer method' (FTM), which works as a channel (p-type) of the thin film transistor (TFT). To determine the NH 3 sensing behavior of the TFT, different concentrations have been exposed of NH 3 (0.5-20 ppm) on the channel of the TFT, which shows the response of ~ 50% at 10 ppm ammonia concentration, which is significantly higher than PBTTT-C14 only TFT. This improvement is made possible by the NH 3 -responsive depleted layer of polymer/QDs heterojunction, which varies widely in the presence of ammonia. As a consequence, the ON/OFF ratio, carrier mobility and threshold voltage (V th ) of the device changes in a wider range. Besides, this TFT based gas sensor is also highly selective to the other interfering gases. In addition to NH 3 gas sensitivity, This TFT also shows very high photosensitivity under white light illumination that enhances 'ON' and 'OFF' current of the device by ~ 2.2 and 70 times, respectively under one sun white light illumination, whereas V th of the device is shifted by ~ 22 V. Besides, the device shows quite fast response/ recovery time under NH 3 gas exposure and light illumination.
chemistry, analytical,electrochemistry,instruments & instrumentation
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