Abstract:Microcantilevers were used widely in physical, chemical, biological and mechanical system as sensors to detect the tiny change of environment. The resonance frequency and Q-factor were usual output quantities during detection. So the study of vibration characteristics of cantilever under different excitation was very important for its uses. In this paper the vibration of silicon cantilever, subjected to a uniform laser excitation on one surface, was investigated experimentally and theoretically. The spectrum analyzer was used to obtain the spectrum response curve of cantilevers. The result showed that the resonance frequency obtained from experimental measurement agreed very well with that obtained from theoretical calculation. To measure the cantilever deflection, an optical experimental apparatus called thermoelastic microscopy, which was based on the principle of heterodyne interferometer, was used to obtain the amplitude and phase of the cantilever deflection under different frequencies of excitation laser. Theoretically, the thermal wave model, along with plasma wave model, was adopted to simulate the vibration of silicon cantilever under optical excitation. The thermal wave model was widely used to describe the change of sample temperature in the physical process during laser operation, while the plasma wave was the specific characterization of semi conducting samples under strong laser excitation, and the plasma wave model was used to describe the change of excess carrier density in sample. These two models were used together here to study the cantilever vibration. The expressions of excess carrier density and temperature of cantilever were obtained. Also the curves of amplitude and the phase of silicon cantilever deflection versus modulation frequency were calculated. The good agreement between measurements and simulations was observed from the results. From linear fitting analysis we obtained a linear relationship between the vibration phase and the square root of modulation frequency. This conclusion was the same as the result from other authors.

Study on the Generalized Thermoelastic Vibration of the Optically Excited Semiconducting Microcantilevers

Study of Photothermal Vibrations of Semiconductor Cantilevers Near the Resonant Frequency

Study on the Vibration of Optically Excited Microcantilevers under Fractional-Order Thermoelastic Theory

Bending of Semiconducting Cantilevers under Photothermal Excitation

Study Of Laser Excited Vibration Of Silicon Cantilever

Photothermal Response in Semiconducting Microcantilevers Produced by Laser Excitation

Dynamic Thermomechanical Response of Bimaterial Microcantilevers to Periodic Heating by Infrared Radiation

Photothermal Elastic Vibration Method: Investigation of the Micro-Electro-mechanical-systems

Study on Photothermal Vibration Response of Gold Coating Semiconducting Microcantilevers

Effect of Surface Elastic on the Response of Microcantilevers under Photothermal Excitation

Study on the Vibration of Functionally Graded Microcantilevers Immersed in Fluids under Photothermal Excitation

Plasma and Thermal Waves in A Semiconducting Cantilever Photogenerated by A Focused Laser Beam

Investigation of the Photothermal Excited Microcantilevers Based on Modified Couple Stress Theory

Electronic And Thermal Generation Of Vibrations Of Optically Excited Cantilevers

Carrier-Diffusion Wave and Thermal Wave in a Semiconducting Microcantilever Generated by Optical Excitation

All-optical dynamic analysis of the photothermal and photoacoustic response of a microcantilever by laser Doppler vibrometry

Vibration Study of Functional Graded Microcantilever Beams in Fluids Based on Modified Couple Stress Theory by Considering Physical Neutral Plane

Study on the Reflection of Photothermal Waves in a Semiconducting Medium under Generalized Thermoelastic Theory

Theory and experiment study of micro/nano photothermal expansion

STUDY ON THE VIBRATION SILICON CANTILEVERS UNDER LASER EXCITATION

Varying Thermal Conductivities of Microelongated Excited Electron-Hole Optical Waves in Semiconductors Subjected to Ramp-Type Heating