Controlling the Crystallization of Nd-doped Bi4Ti3O12 Thin-Films for Lead-Free Energy Storage Capacitors

D. P. Song,J. Yang,J. X. Sun,L-Y Chen,Y. Q. Chu,Y. Wang,J-K Lee

DOI: https://doi.org/10.1063/5.0005775

IF: 2.877

2020-01-01

Journal of Applied Physics

Abstract:Environmentally benign non-lead-based dielectric thin film capacitors with high electrostatic energy density, long-term stability, and fast charge/discharge capability are strongly demanded in advanced electrical and pulsed power devices. Here, we propose that insufficient crystallization is an effective method to achieve high energy storage performance. A high efficiency of 84.3%, together with a good energy density of 41.6J/cm3 and an excellent fatigue endurance, is obtained in a lead-free Nd-doped Bi4Ti3O12 film of low crystallization. An increase in the annealing temperature increases the crystallinity and grain size, which improves the ferroelectric polarization of a thin film. A narrow hysteresis loop with large maximum polarization and small remnant polarization is obtained in the insufficiently crystallized film, which is annealed in the intermediate temperature. This film also shows a lower leakage current compared with the fully crystallized counterpart due to the less defective microstructure. This work provides a straightforward and executable method to design ferroelectric materials for the applications of energy storage capacitors.