High‐Throughput Screening of Low‐Bandgap Organic Semiconductors for Photovoltaic Applications: In the Search of Correlations

Alfonsina Abat Amelenan Torimtubun,Matías-Jesús Alonso Navarro,Arianna Quesada-Ramírez,Xabier Rodríguez-Martínez,José L. Segura,Alejandro R. Goñi,Mariano Campoy-Quiles
DOI: https://doi.org/10.1002/solr.202400213
IF: 9.1726
2024-06-06
Solar RRL
Abstract:Low‐bandgap non‐fullerene acceptors (NFAs) offer a unique potential for photovoltaic (PV) applications, such as transparent PV and agrivoltaics. Evaluating each new PV system to achieve the optimum thickness, microstructure, and device performance is, however, a complex multiparametric challenge with large time and resource requirements. In this work, we evaluate the photovoltaic potential of low‐bandgap donor and NFA materials by combining high‐throughput screening and statistical methods. The use of thickness gradients (20–600 nm) facilitated the fabrication of more than 2000 doctor‐bladed devices from 24 different low‐bandgap blend combinations. The corresponding power conversion efficiencies varied significantly, from 0.06% to 10.45% across materials and thicknesses. The self‐consistency of the large dataset allowed to perform a parameter sensitivity study as well as parameter correlation analysis. These revealed that the choice of materials and energy alignment‐related features (i.e. electron affinity offset, ionization energy offset, band gap, and energy loss) had the largest influence on final device performance, while processing conditions appeared less important for the final efficiencies. Our study demonstrates that high‐throughput experimentation is a perfect match for correlation analyses in order to gain a statistically meaningful understanding of these systems, potentially accelerating the discovery of new materials. This article is protected by copyright. All rights reserved.
energy & fuels,materials science, multidisciplinary
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