Abstract:Optoelectronic synapses possess the potential to seamlessly integrate perception, storage, and neuromorphic computation, thereby offering advantages in constructing artificial vision systems. Gallium nitride (GaN) materials, renowned for their exceptional optoelectronic characteristics and the compatibility of Silicon-based GaN (GaN-on-Si) with CMOS technology, contribute significantly to realizing large-scale optoelectronic neuromorphic circuits. In this study, we present an optoelectronic dual-synapse based on a structurally-improved AlGaN/GaN MIS-HEMT with ring-shaped SiO2 barriers embedded surrounding the source and drain regions. This device facilitates simultaneous signal transmission to the source and drain through current-limiting electrical breakdown beneath the gate. This integration of two discrete optoelectronic synapses within a single device enhances neural signal transmission nodes and branching connectivity, facilitating the construction of large-scale neuromorphic circuits. Under the co-influence of electrical and optical pulses, the device not only demonstrates excellent optoelectronic synaptic characteristics but also exhibits the ability to modulate the critical wavelength of synaptic responses by varying the source/drain voltage, effectively simulating the light signal recognition observed in biological retinas. The synergistic operation of the two sub-synapses enables a successful transition from short-term potentiation (STP) to long-term potentiation (LTP). Furthermore, leveraging the device's STP, we emulate the function of artificial retina through a GaN optoelectronic neuromorphic array, successfully achieving image recognition in conjunction with artificial neural networks (ANNs). The devices developed in this study, based on GaN-on-Si allow wafer-level manufacturing, provding a promising avenue for the large-scale production of optoelectronic synapse devices and the realization of artificial vision systems.

Silicon based optoelectronic synaptic devices

Silicon-based Heterostructures for Optoelectronic Synaptic Devices

Optically Stimulated Synaptic Devices Based on the Hybrid Structure of Silicon Nanomembrane and Perovskite.

Synaptic Devices Based on Semiconductor Nanocrystals

(Invited) Silicon Nanocrystals for Optoelectronic Synaptic Devices

Broadband Optoelectronic Synaptic Devices Based on Silicon Nanocrystals for Neuromorphic Computing

AlGaN/GaN-Based Optoelectronic Synaptic Devices for Neuromorphic Computing

Optoelectronic Synaptic Devices Based on the Heterostructure of Silicon Nanomembrane and P3HT

Silicon-based inorganic-organic hybrid optoelectronic synaptic devices simulating cross-modal learning

Optoelectronic Dual-Synapse Based on Wafer-level GaN-on-Si Device Incorporating Embedded SiO2 Barrier Layers

Perovskite-Enhanced Silicon-Nanocrystal Optoelectronic Synaptic Devices for the Simulation of Biased and Correlated Random-Walk Learning.

Advanced Optoelectronic Devices for Neuromorphic Analog Based on Low‐Dimensional Semiconductors

Dual‐Modal Optoelectronic Synaptic Devices with Versatile Synaptic Plasticity

Synaptic Silicon-Nanocrystal Phototransistors for Neuromorphic Computing

Nanostructured Materials and Architectures for Advanced Optoelectronic Synaptic Devices

Emerging Optoelectronic Devices for Brain‐Inspired Computing

Electroluminescent Synaptic Devices with Logic Functions

Emerging optoelectronic artificial synapses and memristors based on low-dimensional nanomaterials

Neuromorphic device based on silicon nanosheets

2D Material Based Synaptic Devices for Neuromorphic Computing

Analog ferroelectric domain-wall memories and synaptic devices integrated with Si substrates