Pressure‐Induced Superconductivity in Topological Semimetal Candidate TaTe4

Yifang Yuan,Weike Wang,Yonghui Zhou,Xuliang Chen,Chuanchuan Cu,Chao An,Ying Zhou,Bowen Zhang,Chunhua Chen,Ranran Zhang,Zhaorong Yang
DOI: https://doi.org/10.1002/aelm.201901260
IF: 6.2
2020-01-01
Advanced Electronic Materials
Abstract:Quasi‐1D transition metal tetrachalcogenide TaTe4 exhibits charge‐density waves (CDW), large anisotropic magnetoresistance, and nontrivial Berry phase at ambient pressure. Pressure‐induced superconductivity is reported in pristine TaTe4 via electrical transport experiments. It is shown that the superconductivity, first observed at Pc ≈ 8.0 GPa, is robust up to 50.6 GPa. No structural transition is detected up to 21.4 GPa, which indicates the tetragonal structure of TaTe4 is stable across Pc. Hall resistivity measurements reveal that both electron and hole densities increase sharply upon compression up to Pc and level off at higher pressures, suggesting that the emergent superconductivity of pressurized TaTe4 can be attributed to the enhancement of the charge carrier density. This finding may provide a new platform to investigate the interplay among superconducting, CDW, and topological orders.
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