Abstract:Raman spectroscopy has become a key way for characterizing and studying disorder in graphene,due to its nondestructive,rapid and sensitive technique.In this paper,ion implantation is used to produce the structural defects in single-layer graphene(SLG) and bi-layer graphene(BLG).The first-and second-order modes of ion-implanted SLG and BLG and their physical origins were studied by Raman spectroscopy.The dependence of dispersive frequency of first-and second-order modes in SLG and BLG on the excitation energy was discussed in detail.Results show that the ～ 2450 cm 1 peak is the combination mode of the D mode at ～ 1350 cm 1 and the D '' mode at ～ 1150 cm 1.

Raman Spectra of Monoand Bi-Layer Graphenes with Ion-Induced Defects-and Its Dispersive Frequency on the Excitation Energy