The Nonlinear Meminductor Models with Its Study on the Device Parameters Variation
Hangtao Zhu,Shukai Duan,Lidan Wang,Ting Yang,Jinpei Tan
DOI: https://doi.org/10.1109/icist.2017.7926811
2017-01-01
Abstract:The meminductor is a novel kind of electronic device with dynamic variable inductance. On account of its unique memory property, meminductor has garnered increasingly extensive interest from numerous researchers. However, as a nanoscale circuit element, meminductor has been facing huge challenges of variation control during the manufacture process. In this paper, three types of nonlinear meminductor models are described with constructive procedures. Meanwhile, the meminductive characteristics of these three models are verified based on a series of numerical simulations, respectively. In particular, according to the most realistic meminductor electro-mechanical model, we discuss its device characteristics influenced by parameter variation control in detail, i.e., length variation, coil area variation, coil variation and magnetic conductivity variation. Finally, the effectiveness and validity of the proposed scheme are verified by a number of computer simulations, which may contribute to providing theoretical references and reliable experiment basis for the further development of the manufacture of the meminductor and its application research.