Abstract:Diamonds have been shown to be an excellent platform for quantum computing and quantum sensing applications. These applications are enabled by the presence of defects in the lattice, which are also known as color centers. The most common nitrogen-based defect in synthetic diamonds is the paramagnetic nitrogen substitution (P1) center. While the majority of quantum applications rely on nitrogen-vacancy (NV) centers, the properties of the latter are heavily influenced by the presence and the spatial distribution of the P1 centers. Hence, understanding the spatial distribution and mutual interactions of P1 centers is crucial for the successful development of diamond-based quantum devices. Unlike NV centers, P1 centers do not have a spin-dependent optical signature, and their spin-related properties, therefore, have to be detected and characterized using magnetic resonance methods. We show that using high-field (6.9 and 13.8 T) pulsed electron paramagnetic resonance (EPR) and dynamic nuclear polarization (DNP) experiments, we can distinguish and quantify three distinct populations of P1 centers: isolated P1 centers, weakly interacting ones, and exchange-coupled ones that are clustered together. While such clustering was suggested before, these clusters were never detected directly and unambiguously. Moreover, by using electron-electron double resonance (ELDOR) pump-probe experiments, we demonstrate that the latter clustered population does not exist in isolation but coexists with the more weakly interacting P1 centers throughout the diamond lattice. Its presence thus strongly affects the quantum properties of the diamond. We also show that the existence of this population can explain recent hyperpolarization results in type Ib high-pressure, high-temperature (HPHT) diamonds. We propose a combination of high-field pulsed EPR, ELDOR, and DNP as a tool for probing the aggregation state and interactions among different populations of nitrogen substitution centers.

The Role of Isolated Nitrogen in Phosphorescence of High-Temperature-high-pressure Synthetic Type IIb Diamonds

Phosphorescence and donor-acceptor pair recombination in laboratory-grown diamonds

Delayed luminescence and thermoluminescence in laboratory-grown diamonds

Spatial distribution of greenish blue phosporescence in HPHT synthetic diamond: The dual role of boron

Synthesis and characterization of boron and nitrogen co-doped diamond crystals under high pressure and high temperature conditions (vol 19, pg 4571, 2017)

Nitrogen vacancy luminescence and their phonon sidebands characteristics in nitrogen-doped diamond

Donor-acceptor recombination emission in hydrogen-terminated nanodiamond: Novel single-photon source for room-temperature quantum photonics

Photoluminescence of nitrogen-vacancy and silicon-vacancy color centers in phosphorus-doped diamond at room and higher temperatures

Spectral Characteristics of Nitrogen-Doped CVD Synthetic Diamonds and the Origin of Surface Blue Fluorescence

Electroluminescence of Boron and Nitrogen Doped Diamond Thin Films

Proximal nitrogen reduces the fluorescence quantum yield of nitrogen-vacancy centres in diamond

Photoluminescence features of nickel-nitrogen complexes in Ib HPHT diamond matrix

Effects of High Pressure and High Temperature Annealing on the Characteristics of HPHT Diamonds with High Nitrogen Content

Nitrogen Substitutions Aggregation and Clustering in Diamonds as Revealed by High-Field Electron Paramagnetic Resonance

Long-lifetime phosphorescence in diamond for data storage

Spectroscopy of photoionization from the $^1E$ singlet state in nitrogen$-$vacancy centers in diamond

Optically Coherent Nitrogen-Vacancy Centers in HPHT Treated Diamonds

Photoluminescence Study of N-rich B-doped Diamonds Grown in NiMnCo Solvent Before and after Annealing

Synthesis of N-type semiconductor diamonds with sulfur, boron co-doping in FeNiMnCo-C system at high pressure and high temperature

Impurity characterization in diamond for quantum and electronic applications: advances with time-resolved cathodoluminescence

Nitrogen Modulation of Boron Doping Behavior for Accessible N-Type Diamond