Abstract:Magnetism typically arises from the joint effect of Fermi statistics and repulsive Coulomb interactions, which favours ground states with non-zero electron spin. As a result, controlling spin magnetism with electric fields—a longstanding technological goal in spintronics and multiferroics<a href="/articles/s41586-020-2963-8#ref-CR1">1</a>,<a href="/articles/s41586-020-2963-8#ref-CR2">2</a>—can be achieved only indirectly. Here we experimentally demonstrate direct electric-field control of magnetic states in an orbital Chern insulator<a href="#ref-CR3">3</a>,<a href="#ref-CR4">4</a>,<a href="#ref-CR5">5</a>,<a href="/articles/s41586-020-2963-8#ref-CR6">6</a>, a magnetic system in which non-trivial band topology favours long-range order of orbital angular momentum but the spins are thought to remain disordered<a href="#ref-CR7">7</a>,<a href="#ref-CR8">8</a>,<a href="#ref-CR9">9</a>,<a href="#ref-CR10">10</a>,<a href="#ref-CR11">11</a>,<a href="#ref-CR12">12</a>,<a href="#ref-CR13">13</a>,<a href="/articles/s41586-020-2963-8#ref-CR14">14</a>. We use van der Waals heterostructures consisting of a graphene monolayer rotationally faulted with respect to a Bernal-stacked bilayer to realize narrow and topologically non-trivial valley-projected moiré minibands<a href="#ref-CR15">15</a>,<a href="#ref-CR16">16</a>,<a href="/articles/s41586-020-2963-8#ref-CR17">17</a>. At fillings of one and three electrons per moiré unit cell within these bands, we observe quantized anomalous Hall effects<a href="/articles/s41586-020-2963-8#ref-CR18">18</a> with transverse resistance approximately equal to h/2e2 (where h is Planck's constant and e is the charge on the electron), which is indicative of spontaneous polarization of the system into a single-valley-projected band with a Chern number equal to two. At a filling of three electrons per moiré unit cell, we find that the sign of the quantum anomalous Hall effect can be reversed via field-effect control of the chemical potential; moreover, this transition is hysteretic, which we use to demonstrate non-volatile electric-field-induced reversal of the magnetic state. A theoretical analysis<a href="/articles/s41586-020-2963-8#ref-CR19">19</a> indicates that the effect arises from the topological edge states, which drive a change in sign of the magnetization and thus a reversal in the favoured magnetic state. Voltage control of magnetic states can be used to electrically pattern non-volatile magnetic-domain structures hosting chiral edge states, with applications ranging from reconfigurable microwave circuit elements to ultralow-power magnetic memories.

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Deriving MoS2 Nanoribbons from Their Flakes by Chemical Vapor Deposition.

Existence of Long-Range Magnetic Order in Heisenberg Spin Nanoribbon with Edge Modification

Inhomogeneous-strain-induced Magnetic Vortex Cluster in One-Dimensional Manganite Wire.

Strain-tunable Magnetism at Oxide Domain Walls

Intrinsic multiferroicity in molybdenum oxytrihalides nanowires

Strain-induced Programmable Half-Metal and Spin-Gapless Semiconductor in an Edge-Doped Boron Nitride Nanoribbon

Contrasting Structural Reconstructions, Electronic Properties, and Magnetic Orderings along Different Edges of Zigzag Transition Metal Dichalcogenide Nanoribbons

Intrinsic Ferromagnetic Semiconductivity Realized in a New MoS2 Monolayer

Inducing Abundant Magnetic Phases and Enhancing Magnetic Stability by Edge Modifications and Physical Regulations for NiI2 Nanoribbons

Magnetic Field-Induced Polar Order in Monolayer Molybdenum Disulfide Transistors

Manipulating the One-Dimensional Topological Edge State of Bi Bilayer Nanoribbons Via Magnetic Orientation and Electric Field

Rich magnetic phase transitions and completely dual-spin polarization of zigzag PC3 nanoribbons under uniaxial strain

Electric-field-driven Deterministic and Robust 120° Magnetic Rotation in a Concave Triangular Nanomagnet

Width-tuned Magnetic Order Oscillation on Zigzag Edges of Honeycomb Nanoribbons

Electrical switching of magnetic order in an orbital Chern insulator

Magnetically tuned topological phase in graphene nanoribbon heterojunctions

Bias Voltage Driven Tunneling Magnetoresistance Polarity Reversal in 2D Stripy Antiferromagnet CrOCl

Potential-tuned magnetic switches and half-metallicity transition in zigzag graphene nanoribbons

Electrically Driven Reversible Magnetic Rotation in Nanoscale Multiferroic Heterostructures.

Magnetotransport in a zigzag monolayer MoS2 nanoribbon with ferromagnetic electrodes