Carrier Transport Limited by Trap State in Cs2AgBiBr6 Double Perovskites

Yanfeng Yin,Wenming Tian,Jing Leng,Jiming Bian,Shengye Jin
DOI: https://doi.org/10.1021/acs.jpclett.0c01817
IF: 6.888
2020-01-01
The Journal of Physical Chemistry Letters
Abstract:Understanding the photoinduced carrier dynamics in Cs2AgBiBr6 double perovskites is essential for their application in optoelectronic devices. Herein, we report an investigation on the temperature-dependent carrier dynamics in a Cs2AgBiBr6 single crystal (SC). The time-resolved photoluminescence (TRPL) measurement indicates that the majority of carriers (>99%) decay through a fast trapping process at room temperature, and as the temperature decreases to 123 K, the population of carriers with a slow fundamental decay kinetics rises to ∼50%. We show that the carrier diffusion coefficient (theoretical diffusion length) varies from 0.020 ± 0.003 cm2 s-1 (0.70 μm) at 298 K to 0.11 ± 0.010 cm2 s-1 (2.44 μm) at 123 K. However, in spite of the long diffusion length, the population of carriers that can perform long-distance transport is restricted by the trap state, which is likely a key reason limiting the performance of Cs2AgBiBr6 optoelectronic devices.
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