A Photoconductive X‐ray Detector with a High Figure of Merit Based on an Open‐Framework Chalcogenide Semiconductor

Sijie Wu,Chengyu Liang,Jiaxu Zhang,Zhou Wu,Xiao-Li Wang,Rui Zhou,Yaxing Wang,Shuao Wang,Dong-Sheng Li,Tao Wu

DOI: https://doi.org/10.1002/ange.202010290

2020-01-01

Angewandte Chemie

Abstract:AbstractA wide range of tunability in the physical parameters of a semiconductor used for X‐ray detection is desirable to achieve targeted performance optimization. However, in a dense‐phase semiconductor, fine‐tuning one parameter often leads to unwanted changes in other parameters. Herein, the intrinsic openness in an open‐framework semiconductor has been confirmed, for the first time, to be a key structural factor that weakens the mutual exclusivity of the adjustable physical parameters owing to a non‐linear control mechanism. The controllable doping of S in a zeolitic In–Se host results in an optimal balance between resistivity, band gap, and carrier mobility, which finally results in an excellent X‐ray detector with a high figure of merit for the mobility–lifetime product (7.12×10−4 cm2 V−1); this value is superior to that of a commercial α‐Se detector. The current strategy of choosing open‐framework semiconductor materials opens a new window for targeting high‐performance X‐ray detection.