Abstract:The ability to directly monitor the states of electrons in modern field-effect devices—for example, imaging local changes in the electrical potential, Fermi level and band structure as a gate voltage is applied—could transform our understanding of the physics and function of a device. Here we show that micrometre-scale, angle-resolved photoemission spectroscopy<a href="#ref-CR1">1</a>,<a href="#ref-CR2">2</a>,<a href="/articles/s41586-019-1402-1#ref-CR3">3</a> (microARPES) applied to two-dimensional van der Waals heterostructures<a href="/articles/s41586-019-1402-1#ref-CR4">4</a> affords this ability. In two-terminal graphene devices, we observe a shift of the Fermi level across the Dirac point, with no detectable change in the dispersion, as a gate voltage is applied. In two-dimensional semiconductor devices, we see the conduction-band edge appear as electrons accumulate, thereby firmly establishing the energy and momentum of the edge. In the case of monolayer tungsten diselenide, we observe that the bandgap is renormalized downwards by several hundreds of millielectronvolts—approaching the exciton energy—as the electrostatic doping increases. Both optical spectroscopy and microARPES can be carried out on a single device, allowing definitive studies of the relationship between gate-controlled electronic and optical properties. The technique provides a powerful way to study not only fundamental semiconductor physics, but also intriguing phenomena such as topological transitions<a href="/articles/s41586-019-1402-1#ref-CR5">5</a> and many-body spectral reconstructions under electrical control.

Supplementary Information Tuning Electronic Transport in Epitaxial Graphene-based van der Waals Heterostructures

Tuning electronic transport in epitaxial graphene-based van der Waals heterostructures.

Optical Parameters of Graphene/mos2 Van Der Waals Heterostructure Investigated by Spectroscopic Ellipsometry

Interfacial Electronic Properties and Adjustable Schottky Barrier at Graphene/CsPbI3 Van Der Waals Heterostructures

Epitaxial Graphene Electronic Structure And Transport

Tunable Electronic Properties and Giant Spontaneous Polarization in Graphene/Monolayer GeS Van Der Waals Heterostructure

Tunable Electronic Structure and Magnetic Characteristics of Two-Dimensional Graphyne/vi3 Van Der Waals Heterostructures

Engineering 2D Material Exciton Line Shape with Graphene/ h -BN Encapsulation

Engineering 2D material exciton lineshape with graphene/h-BN encapsulation

Raman Scattering and Tunable Electron–phonon Coupling in Single Layer Graphene

Visualizing electrostatic gating effects in two-dimensional heterostructures

Electronic Transport Behavior in High-Quality Twisted Bilayer Graphene Nanoribbons

Possible charge ordering and anomalous transport in graphene/graphene quantum dotheterostructure

Electronic Cooling Via Interlayer Coulomb Coupling in Multilayer Epitaxial Graphene

Disentangling Light‐Induced Charge Transfer, Heating, and Strain Effects in WS2/Graphene Heterostructures

Substrate Doping Effect and Unusually Large Angle Van Hove Singularity Evolution in Twisted Bi- and Multilayer Graphene.

Tunable Schottky barrier in van der Waals heterostructures of graphene and hydrogenated phosphorus carbide monolayer: first-principles calculations

Electronic transport in graphene-based heterostructures

Tunable Dirac Points and Perfect Transmission in Asymmetric Graphene Superlattices

A Study of Vertical Transport Through Graphene Toward Control of Quantum Tunneling

Tuning Structures and Electronic Spectra of Graphene Layers with Tilt Grain Boundaries