Recent Materials Characterizations of [2D] and [3D] Thin Film Ferroelectric Structures
JF Scott,FD Morrison,M Miyake,P Zubko,XJ Lou,VM Kugler,S Rios,M Zhang,T Tatsuta,O Tsuji,TJ Leedham
DOI: https://doi.org/10.1111/j.1551-2916.2005.00486.x
IF: 4.186
2005-01-01
Journal of the American Ceramic Society
Abstract:A review is given of ceramic and single‐crystal thin film ferroelectric oxides, emphasizing perovskite phases, together with some new developments on hafnia films. It is shown that single‐crystal barium titanate films behave as bulk down to at least 77 nm, with no finite size effects, no phase transition temperature shifts, and no dielectric peak broadening or change from first‐ to second‐order transitions, suggesting that the gradient defect model of Bratkovsky and Levanyuk correctly describes such effects as extrinsic in experimental studies of equally thin ceramic thin films. In ceramic barium–strontium titanate (BST) thin films, it is shown that there is also no intrinsic broadening or shifts in phase transitions, with sharp, unshifted, bulk‐like transitions observed only as re‐entrant upon warming from cryogenic temperatures; this shows that phase transitions in ceramic thin films are dominated by kinetics and not thermodynamics and are definitely not equilibrium measurements. At high fields (>1 GV/m), the films exhibit space charge‐limited conduction; no variable‐range hopping is observed, contrary to recent studies on SrTiO3. Some novel, unconventional switching processes are discussed, comparing the “perimeter effect” (non‐equilibrium, ballistic) with Molotskii's equilibrium model. Theory and experiment are described for [3D] nanotubes, nanorods, and nano‐ribbons (or micro‐ribbons). The layered‐structure‐perovskite–pyrochlore conversion in bismuth titanate is described together with the PbO+TiO2 phase separation in lead zirconate titanate during electrical breakdown, as are novel HfO2 precursors that demonstrate enhanced temperature crystallization from the amorphous state and hence commercial advantages for front‐end processing.