PHYSICAL REVIEW B 97, 174102 (2018) Pressure-induced structural and semiconductor-semiconductor transitions in Co0.5Mg0.5Cr2O4
S. Rahman,Hajra Saqib,Jinbo Zhang,D. Errandonea,C. Menéndez,C. Cazorla,Sudeshna Samanta,Xiaodong Li,Junling Lu,Lin Wang
2018-01-01
Abstract:S. Rahman,1,2 Hajra Saqib,2 Jinbo Zhang,3 D. Errandonea,4 C. Menéndez,5 C. Cazorla,5 Sudeshna Samanta,2 Xiaodong Li,6 Junling Lu,1,* and Lin Wang2,† 1Department of Chemical Physics, University of Science and Technology of China, Hefei, China 2Center for High Pressure Science and Technology Advanced Research, Shanghai 201203, China 3College of Physical Science and Technology, Yangzhou University, Yangzhou 225002, China 4Departamento de Física Aplicada-ICMUV, MALTA Consolider Team, Universidad de Valencia, Edificio de Investigación, C/Dr. Moliner 50, Burjassot, 46100 Valencia, Spain 5School of Materials Science and Engineering, UNSW Australia, Sydney NSW 2052, Australia 6Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China