Electrical Manipulation of Orbital Current Via Oxygen Migration in Ni81fe19/Cuox/Tan Heterostructure
Taiyu An,Bin Cui,Mingfang Zhang,Fufu Liu,Shaobo Cheng,Kuikui Zhang,Xue Ren,Liang Liu,Bin Cheng,Changjun Jiang,Jifan Hu
DOI: https://doi.org/10.1002/adma.202300858
IF: 29.4
2023-03-30
Advanced Materials
Abstract:The orbital Hall effect and the interfacial Rashba effect provide new approaches to generate orbital current and spin‐orbit torque (SOT) efficiently without the use of heavy metals. However, achieving efficient dynamic control of orbital current and SOT in light metal oxides has proven challenging. In this study, we demonstrate that a sizable magnetoresistance effect related to orbital current and SOT can be observed in Ni81Fe19/CuOx/TaN heterostructures with various CuOx oxidisation concentrations. The ionic liquid gating induces migration of oxygen ions, which modulates the oxygen concentration at the Ni81Fe19/CuOx interface, leading to reversible manipulation of the magnetoresistance effect and SOT. The existence of a thick TaN capping layer allows for sophisticated internal oxygen ion reconstruction in the CuOx layer, rather than conventional external ion exchange. These results provide a method for the reversible and dynamic manipulation of the orbital current and SOT generation efficiency, thereby advancing the development of spin‐orbitronics devices through ionic engineering. This article is protected by copyright. All rights reserved
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology