Room temperature phosphorescence from Si-doped-CD-based composite materials with long lifetimes and high stability

Guangqi Hu,Yixuan Xie,Xiaokai Xu,Bingfu Lei,Jianle Zhuang,Xuejie Zhang,Haoran Zhang,Chaofan Hu,Wenshi Ma,Yingliang Liu
DOI: https://doi.org/10.1364/OE.391722
IF: 3.8
2020-01-01
Optics Express
Abstract:C-dot-based composites with phosphorescence have been widely reported due to their attractive potential in various applications. But easy quenching of phosphorescence induced by oxygen or instability of matrices remained a tricky problem. Herein, we reported a Si-doped-CD (Si-CD)-based RTP materials with long lifetime by embedding Si-CDs in sulfate crystalline matrices. The resultant Si-CD@sul fate composites exhibited a long lifetime up to 1.07 s, and outstanding stability under various ambient conditions. The intriguing RTP phenomenon was attributed to the C = O bond and the doping of Si element due to the fact that sulfates could effectively stabilize the triplet states of Si-CDs, thus enabling the intersystem crossing (ISC). Meanwhile, we confirmed that the ISC process and phosphorescence emission could be effectively regulated based on the heavy atom effect. This research introduced a new perspective to develop materials with regulated RTP performance and high stability. (C) 2020 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
What problem does this paper attempt to address?