Dual-band terahertz switch based on EIT/Fano effect

Li Da,Li Jiu-sheng
DOI: https://doi.org/10.1016/j.optcom.2020.125862
IF: 2.4
2020-01-01
Optics Communications
Abstract:Terahertz system requires dynamic manipulation of terahertz wave, however, quite a few terahertz wave devices are static, and their functions are fixed after fabrication. We realize a dual-band terahertz switch based on electromagnetic induced transparency (EIT) and Fano effect through change the operating temperature. It consists of two rectangular strips, VO2-embedded rectangular-split ring, and silicon substrate. The extinction ratios of the dual-band terahertz switch at 0.480 THz and 0.675 THz are 20.5 dB and 12.2 dB, respectively. Our approach can be used to design dynamic multi-wavelength terahertz beam manipulation devices.
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