N-Oxide Containing Conjugated Semiconducting Polymer with Enhanced Electron Mobility via Direct (Hetero)Arylation Polymerization

Xiandong He,Feng Ye,Jia-Cheng Guo,Wenju Chang,Bingxu Ma,Riqing Ding,Sijing Wang,Yong Liang,Dehua Hu,Zi-Hao Guo,Yuguang Ma
DOI: https://doi.org/10.1039/d3py00207a
IF: 4.6
2023-03-24
Polymer Chemistry
Abstract:In this paper, an N-oxide building block, 4,4'-dimethyl-[2,2'-bithiazole] 3,3'-dioxide (MeBTzO), was designed and synthesized by oxidation of sp2- nitrogen in aromatic ring. Theoretical calculation results showed that MeBTzO has higher reactivity than non-oxide monomer 4,4'-dimethyl-2,2'-bithiazole (MeBTz) in direct (hetero)arylation polymerization (DHAP). Therefore, N-oxide containing conjugated semiconducting polymer, PDPPMeBTzO, was successfully synthesized via DHAP of MeBTzO with thiophene-flanked diketopyrrolopyrrole (DPP). PDPPMeBTzO possesses lower lowest unoccupied molecular orbital (LUMO) than non-oxide analogous polymer PDPPMeBTz, which will facilitate electron injection and transportation in organic field-effect transistors (OFETs). As a result, PDPPMeBTzO has obviously enhanced electron transporting property with higher μe of 0.11 cm2 V−1 s-1 compared to PDPPMeBT with μe of 7.49×10-3 cm2 V−1 s-1. Our strategy demonstrated that introducing N-oxide group in conjugated polymers has great potential for high performance electron-transporting CSP materials.
polymer science
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