Anion-induced robust ferroelectricity in sulfurized pseudo-rhombohedral epitaxial BiFeO3 thin films via polarization rotation
Guoqiang Xi,Zhao Pan,Yue-Wen Fang,Jie Tu,Hangren Li,Qianqian Yang,Chen Liu,Huajie Luo,Jiaqi Ding,Shuai Xu,Shiqing Deng,Qingxiao Wang,Dongxing Zheng,Youwen Long,Kuijuan Jin,Xixiang Zhang,Jianjun Tian,Linxing Zhang,zhao Pan,chen Liu
DOI: https://doi.org/10.1039/d3mh00716b
IF: 13.3
2023-07-12
Materials Horizons
Abstract:Polarization rotation caused by various strains, such as substrate and/or chemical strain, is essential to control the electronic structure and properties of ferroelectric materials. This study proposes, for the first time, anion-induced polarization rotation with chemical strain, which effectively improves ferroelectric. A method for the sulfurization of BiFeO3 thin films by introducing sulfur anions is presented. The sulfurized films exhibited substantial enhancement in room-temperature ferroelectric polarization through polarization rotation and distortion, with a 170% increase in the remnant polarization from 58 to 100.7 μC/cm2. According to first-principles calculations and experiment results, this enhancement arose from the introduction of S atoms drives the re-distribution of the lone-pair electrons of Bi, resulting in the rotation of the polarization state from the [001] direction to the [110] or [111] one. The presented method of anion-driven polarization rotation might enable the improvement of the properties of oxide materials.
materials science, multidisciplinary,chemistry