Abstract:Antiferroelectric (AFE) ceramics are promising for applications in high‐power density capacitors, transducers, etc. The forward switching field and backward switching field are critical performance indicators for AFE ceramics, and the coupling between the structure transition and domain orientation makes them different from the coercive field of ferroelectric (FE). Moreover, in practical applications, AFE ceramics are often required to operate at varying frequencies. However, systematic studies regarding the frequency dependence of and are insufficient. In this work, (PLZST) AFE ceramic was fabricated, and two empirical formulas (, ) were proposed to predict the frequency dependence of and . The formulas are based on the electric field–induced phase transition characteristics of AFE and the Kolmogorov–Avrami–Ishibashi domain nucleation‐switching model. Furthermore, the dynamic hysteresis loops of PLZST at various frequencies (1–1000 Hz) and temperatures (–) were investigated. The results show that the electric field–induced phase transition of AFE ceramic is dominated by the coupling between the structural transition and domain orientation. The domain orientation hinders the structure transition, leading to an increase in and a decrease in as the frequency of applied electric field increases. Meanwhile, the domain growth process is affected by the structure of AFE, and the value of (domain growth dimensionality) increases with the stability of the AFE structure. For comparison, (PLBZST) relaxor FE ceramic was fabricated. Due to the high mobility of the microdomain, the dynamic hysteresis loop of PLBZST ceramic exhibits excellent frequency stability. The charge–discharge experiment with an ultrahigh equivalent frequency (100 kHz) was performed to investigate the frequency stability of energy release of PLZST and PLBZST. The results may provide guidance for research pertaining to ceramic capacitors with high‐power density and high‐frequency stability.

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