Additive-assisted Synthesis and Optoelectronic Properties of (Ch3nh3)4bi6i22

Manila Sharma,Aymen Yangui,Alain Lusson,Kamel Boukheddaden,Xiaxin Ding,Mao-Hua Du,Krzysztof Gofryk,Bayrammurad Saparov
DOI: https://doi.org/10.1039/c9qi01574d
IF: 7.779
2020-01-01
Inorganic Chemistry Frontiers
Abstract:A novel iodobismuthate semiconductor (MA)4Bi6I22 (measured bandgap of 1.9 eV) was prepared using solution methods in the presence of HgI2 additive.
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