A 25.0-to-35.9GHz Dual-Layer Quad-Core Dual-Mode VCO with 189.1dBc/Hz FoM and 200.2dBc/Hz FoMT at 1MHz Offset in 65nm CMOS
Pingda Guan,Haikun Jia,Wei Deng,Ruichang Ma,Huabing Liao,Zhihua Wang,Baoyong Chi
DOI: https://doi.org/10.1109/CICC57935.2023.10121234
2023-01-01
Abstract:The 5 G communication has placed stringent requirements on the performance of local oscillators (LOs). The LO needs a wide frequency tuning range to cover the various mm-wave frequency bands allocated for 5 G communication and ultra-low phase noise to support advanced modulations such as 1024-QAM. However, with increasing parasitic effects and limited quality factors of passive components in mm-wave bands, it is challenging to meet such requirements. For low phase noise, multi-core technologies have been widely used [1 –5]. Coupled N cores optimize the phase noise by $10 \log (N) d B$. For a wide tuning range, multi-mode technologies have been developed [1 –3]. Multiple oscillation modes extend the frequency tuning range with less phase noise penalty than simply enlarging capacitor banks or varactors. Another critical but rarely discussed aspect of oscillators is the supply voltage VDD. A standard VDD is imperative for the system integration of oscillators. However, VDD lower than the standard is used in many reported oscillators to optimize the FoM [1–2]. When a standard VDD is applied to those oscillators, low-dropout regulators (LDOs) or tail current sources are necessary to control the voltage swing. Otherwise, the oscillator core would face reliability issues. The LDOs or tail current sources consume extra power, inevitably degrading the overall FoM.