Mitigating deep-level defects through a self-healing process for highly efficient wide-bandgap inorganic CsPbI3-xBrx perovskite photovoltaics
Jun Liu,Ming Wang,Jinhong Lin,Guojie Chen,Baoxing Liu,Jincheng Huang,Meng Zhang,Guangxing Liang,Lei Lu,Ping Xu,Bingbing Tian,Hoi-Sing Kwok,Guijun Li,Guang-xing Liang,Hoi Sing Kwok,Guijun LI
DOI: https://doi.org/10.1039/d2ta02022j
IF: 11.9
2022-07-25
Journal of Materials Chemistry A
Abstract:Wide bandgap inorganic perovskites have attracted intensive attention owing to their potential applications in high-efficiency tandem solar cells and indoor photovoltaics. However, the performance of wide bandgap inorganic perovskite solar cells (PSCs) suffers from large energy loss due to a high degree of atom (or lattice) disorder and trap defects induced by the phase transformation. Herein, the defect states of the 1.82 eV inorganic CsPbI3-xBrx perovskite are investigated by thermal admittance spectroscopy, photoluminescence spectra, transient photovoltage, and space-charge-limited current measurement. It is found that the deep-level interstitial defects with an activation energy of 321 meV can be reduced by two orders of magnitude under prolonged storage in a low-humidity ambient condition. The admittance spectroscopy at low-fequency region also reveals the evolution of the activation energy for ion migration. The self-healing process, which is assisted by the ion migration, is proposed to explain the mitigation of the deep-level interstitial defects. Device characterization and drift-diffusion model-based simulation further elucidate the reduction of the nonradiative Shockley−Read−Hall recombination and the enhancement of the carrier extraction, both attributed to the mitigation of the trap defects. This work highlights the critical roles of the self-healing process in diminishing the deep-level interstitial defects for high-performance inorganic perovskite optoelectronics.
materials science, multidisciplinary,chemistry, physical,energy & fuels