Applying amorphous InGaZnO-TFT to RFID tag

H. Wakana,T. Yamazoe,T. Kawamura,Hiroaki Ozaki,M. Hatano,H. Uchiyama
DOI: https://doi.org/10.1109/AM-FPD.2014.6867207
2014-07-02
Abstract:Trial production of a thin-film radio frequency identification (RFID) tag with a built-in antenna was carried out using an amorphous InGaZnO (a-InGaZnO) thin-film transistor (TFT). A rectifier circuit, RF communication circuit, and logic circuit were formed using an a-InGaZnO TFT. Even after adding an antenna, which is the thickest part, the RFID itself had a thickness of about 1 μm. The RFID operated with a 13.56-MHz-band reader for IC cards and near field communication (NFC) devices. These results indicate the feasibility of an RFID tag that can be adhered to objects with a variety of shapes.
Engineering,Materials Science
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