Effect of Oxygen Partial Pressure on the Phosphorescence of Different Lanthanide Ion (Ln3+)-Doped Yttria-Stabilised Zirconia

Yongzeng Li,Tao Cai,Lixia Yang,Songtao Guo,Di Peng,Xiaofeng Zhao,Yingzheng Liu

DOI: https://doi.org/10.1016/j.snb.2020.127666

2020-01-01

Abstract:In this study, the effect of oxygen partial pressure on phosphorescence was investigated for different lanthanide ion-doped (Ln = Eu, Dy, Sm, Er) yttria-stabilized zirconia (YSZ). Samples of YSZ powders doped with 1 mol% Ln(3+) were prepared using the sol-gel method. A measurement system comprising a pressure and temperature calibration chamber, a 405 nm laser, a spectrometer, a photo-multiplier tube (PMT) and related optics was established. The phosphor emission spectra were measured first to verify the sample fabrication method. Then, the phosphorescence lifetime of the Ln(3+)-doped YSZ (YSZ:Ln) were obtained at different oxygen partial pressures and temperatures. These data showed that all the YSZ:Ln aside from the YSZ:Er exhibited a negative correlation between phosphorescence lifetime and oxygen partial pressure in high-temperature environments. The oxygen sensitivity was enhanced as temperature increased, and further analysis showed that this oxygen sensitivity was related to the energy levels of the phosphor's excited state and charge transfer state. That is, an excited state at a high energy level and a change transfer state at a low energy level would lead to oxygen sensitivity. These findings not only provide a useful reference for the evaluation of the oxygen effect on YSZ:Ln(3+)-based phosphor thermometry but may also serve as a basis for developing optical pressure sensors suitable for high-temperature environments.