Synthesis of Bismuth Sulfide Nanobelts for High Performance Broadband Photodetectors

Jinzhuo Xu,Henan Li,Shaofan Fang,Ke Jiang,Huizhen Yao,Feier Fang,Fuming Chen,Ye Wang,Yumeng Shi

DOI: https://doi.org/10.1039/c9tc06780a

IF: 6.4

2020-01-01

Journal of Materials Chemistry C

Abstract:We fabricated a superior broadband photodetector based on single crystal Bi2S3nanobelts with a high sensitivity to UV-near infrared light.

What problem does this paper attempt to address?

Ultra-broadband Microfiber-Coupled Superconducting Single-Photon Detector

Xintong Hou,Ni Yao,Lixing You,Hao Li,Yong Wang,Weijun Zhang,Heqing Wang,Xiaoyu Liu,Wei Fang,Limin Tong,Zhen Wang,Xiaoming Xie

DOI: https://doi.org/10.1364/oe.27.025241

IF: 3.8

2019-01-01

Optics Express

Abstract:Broadband photon detectors are a key enabling technology for various applications such as spectrometers, light detection and ranging. In this work, we report on an ultra-broadband single-photon detector based on a microfiber (MF)-coupled superconducting nanowires structure operating in the spectral range from visible to near-infrared light. The MF-coupled superconducting nanowire single-photon detector (SNSPD) is formed by placing an MF on top of superconducting niobium nitride (NbN) nanowires, allowing ultra-broadband photon detection due to their nearly lossless transmission/absorption and nearly unity internal efficiency for ultra-broad waveband. The simulation results indicate that with optimal device structure, the optical absorption with efficiency > 90% can be realized over a wavelength range of 350 nm to 2150 nm. The fabricated MF-coupled SNSPD shows unparalleled broadband system detection efficiencies (SDEs) of more than 50% from 630 nm to 1500 nm. The SDEs reach 66% at 785 nm and 45% at 1550 nm. These results pave the way for ultra-broadband weak light detection with quantum-limit sensitivity.
Facile Synthesis of Bismuth Nanoparticles for Efficient Self-Powered Broadband Photodetector Application

Song Yang,Shujie Jiao,Yiyin Nie,Tanjun Jiang,Hongliang Lu,Shuo Liu,Yue Zhao,Shiyong Gao,Dongbo Wang,Jinzhong Wang,Yongfeng Li

DOI: https://doi.org/10.1016/j.jmst.2022.03.019

2022-01-01

Abstract:Bismuth,an emerging topological insulator,has attracted great interest due to its fascinating proper-ties.Herein,a facile,environmentally friendly,and low-cost solvothermal route was proposed to syn-thesize high-quality single-crystal bismuth nanoparticles.The performance of bismuth nanoparticles photoelectrochemical-type photodetector has been systematically evaluated.The responsivity spectrum shows that the bismuth nanoparticles photodetector has a broad response range from ultraviolet(UV)to near-infrared(NIR),with the highest responsivity of 4.979 mA/W at a wavelength of 405 nm without bias.Additionally,the device exhibits a fast response speed(tr＜12 ms,td＜46 ms)and a high specific detectivity(3.71×1010 Jones).These results indicate that bismuth nanoparticles have great potential in the application of self-powered broadband photodetectors with high responsivity.Moreover,the working mechanism of bismuth nanoparticles photodetector was proposed.
High-Performance Broadband Photoelectrochemical Photodetectors Based on Ultrathin Bi2O2S Nanosheets.

Xuxuan Yang,Lihang Qu,Feng Gao,Yunxia Hu,Huan Yu,Yunxia Wang,Mengqi Cui,Yunxiao Zhang,Zhendong Fu,Yuewu Huang,Wei Feng,Bin Li,PingAn Hu

DOI: https://doi.org/10.1021/acsami.1c22448

IF: 9.5

2022-01-01

ACS Applied Materials & Interfaces

Abstract:Two-dimensional (2D) bismuth oxychalcogenide (Bi2O2X, X refers to S, Se, and Te) is one type of rising semiconductor with excellent electrical transport properties, high photoresponse, and good air stability. However, the research on 2D Bi2O2S is limited. In this work, ultrathin Bi2O2S nanosheets are synthesized by a facile and eco-friendly chemical synthesis method at room temperature. The thickness and lateral sizes are 2-4 nm and 20-40 nm, respectively. The 2D ultrathin Bi2O2S nanosheets have a broad absorption spectrum from ultraviolet (UV) to near-infrared (NIR). Photoelectrochemical (PEC) photodetectors based on 2D Bi2O2S nanosheets are fabricated by a simple drop-casting method. The 2D Bi2O2S-based PEC photodetectors show excellent photodetection performance with a broad photoresponse spectrum from 365 to 850 nm, a high responsivity of 13.0 mA/W, ultrafast response times of 10/45 ms, and good long-term stability at a bias voltage of 0.6 V, which are superior to most 2D material-based PEC photodetectors. Further, the 2D Bi2O2S PEC photodetector can function as a high-performance self-powered broadband photodetector. Moreover, the photoresponse performance can be effectively tuned by the concentration and the kind of electrolyte. Our results demonstrate that 2D Bi2O2S nanosheets hold great promise for application in high-performance optoelectronic devices.
Single Bi2S3/Bi2S3-xOx Nanowire Photodetector with Broadband Response from Ultraviolet to Near-Infrared Range

Yufeng Liu,Peng Chen,Guozhang Dai,Weitao Su,Yan Sun,Jingshan Hou,Na Zhang,Guoying Zhao,Yongzheng Fang,Ning Dai

DOI: https://doi.org/10.1016/j.physe.2020.114041

IF: 3.369

2020-01-01

Physica E Low-dimensional Systems and Nanostructures

Abstract:Constructing heterojunction in single nanowire (NW) can improve the band alignments of heterogeneous interface to promote the optoelectronic performance of materials. In this paper, Bi2S3/Bi2S3-xOx heterojunction NWs are in situ constructed by surface oxidation technique to fill the vacancies of sulfur with oxygen atoms into Bi2S3 NWs. According to the first principle calculation, Bi2S3-xOx shell possesses a narrower band gap of 1.32 eV than that of Bi2S3 core, which aids NW further to enlarge the response range of near infrared spectrum. Moreover, n-type Bi2S3 converts to p-type Bi2S3-xOx owing to the incorporation of oxygen atoms in the surface of the NWs based on the calculated electronic structures. The band alignment of Bi2S3/Bi2S3-xOx heterojunction contributes to transform the carriers between the interface of Bi2S3 and Bi2S3-xOx. As a result, the single Bi2S3 NW based photodetector presents a broadband response from ultraviolet light of 325 to near-infrared light of 1064 nm. Moreover, the detectivity of photodetector is up to 10(11) Jones for the visible light of 405, 442 and 642 nm. This investigation demonstrates an efficient broadband photodetector based on Bi2S3/Bi2S3-xOx NWs, in which provides an effective route to develop the high performance of optoelectronic devices for the other NWs.
Ultrafast Broadband Photodetector Based on SnS Synthesized by Hydrothermal Method

He Tian,Chao Fan,Gangzha Liu,Shuo Yuan,Yonghui Zhang,Mengjun Wang,Erping Li

DOI: https://doi.org/10.1016/j.apsusc.2019.05.175

IF: 6.7

2019-01-01

Applied Surface Science

Abstract:As one of the few two dimensional intrinsic p-type semiconductor materials, fin (II) sulfide (SnS) has gradually emerged in the field of layered metal chalcogenides (LMCs) and has attracted enormous attention due to its superior properties, such as high absorption and low power consumption. In this work, SnS is obtained by a simple, effective and low-cost hydrothermal synthesis route. The morphology, phase structure and chemical composition of the obtained SnS are characterized. The results show that the as-synthesized SnS has a belt-like structure with high purity and crystallinity. The belt length and width are similar to 15 mu m and similar to 5 mu m, respectively. Photodetectors based on such SnS are fabricated, and the photoresponse characteristics are also explored. The photodetectors show excellent and ultrafast photoresponse performance in a broad spectral range in the visible and near-infrared regions. The rise and decay time under illumination at the near-infrared wavelength of 850 nm laser are short as 1.1 ms and 1.3 ms, respectively. The ultrafast photoresponse performance makes SnS a promising candidate for Vis-NIR photodetectors.
A High Performance Broadband Photodetector Based on (snxsb1−x)2se3 Nanorods with Enhanced Electrical Conductivity

Shuo Chen,Khurram Shehzad,Xvsheng Qiao,Xue Luo,Xuemei Liu,Yuting Zhang,Xianghua Zhang,Yang Xu,Xianping Fan

DOI: https://doi.org/10.1039/c8tc03834a

IF: 6.4

2018-01-01

Journal of Materials Chemistry C

Abstract:An effective hot-injection method is used to synthesize (SnxSb1−x)2Se3 nanorods with enhanced electrical conductivity for high performance broadband photodetection.
Fabrication of Ultrathin Bi2 S3 Nanosheets for High-Performance, Flexible, Visible-NIR Photodetectors.

Guihuan Chen,Yongqiang Yu,Kun Zheng,Tao Ding,Wenliang Wang,Yang Jiang,Qing Yang

DOI: https://doi.org/10.1002/smll.201403508

IF: 13.3

2015-01-01

Small

Abstract:Ultrathin Bi2 S3 nanosheets with thicknesses down to 2.2 nm are fabricated. The resultant ultrathin Bi2 S3 -based photoconductor shows high sensitivity to visible-near infrared light from 405 to 780 nm with a high external photoresponsivity up to 4.4 A W(-1) , high detectivity of ≈10(11) Jones, relatively fast response time of ≈10 μs, and high flexibility and durability.
A self-powered high performance UV-Vis-NIR broadband photodetector based on β-Bi2O3 nanoparticles through defect engineering

Song Yang,Shujie Jiao,Yiyin Nie,Hongliang Lu,Shuo Liu,Yue Zhao,Shiyong Gao,Dongbo Wang,Jinzhong Wang,Yongfeng Li

DOI: https://doi.org/10.1039/d1tc05646h

IF: 6.4

2022-05-19

Journal of Materials Chemistry C

Abstract:Broadband photodetectors are essential for military and civilian applications. Metal oxides have been widely investigated as photodetectors due to their facile synthesis, low cost and good stability. However, the inherent wide-bandgap allows them to mainly absorb light in the ultraviolet (UV) region, limiting their application in broadband photodetectors. Herein, a self-powered ultraviolet-visible-near infrared (UV-Vis-NIR) photodetector based on β-Bi 2 O 3 nanoparticles is reported, owing to the intrinsic defects introduced through low-temperature thermal oxidation of bismuth (Bi), which induces light absorption in the UV-Vis-NIR region. Moreover, the device exhibits high-efficiency detection performance in the UV (365 nm) to NIR (850 nm) region, especially with a high responsivity of 29.92 mA W −1 , a high specific detectivity of 7.46 × 10 10 Jones and a fast response time of 20/70 ms under light illumination with a wavelength of 365 nm. These results demonstrate that β-Bi 2 O 3 nanoparticles are promising for high-efficiency broadband photodetector applications. This work also opens up a new strategy for constructing broadband photodetectors based on metal oxides.

materials science, multidisciplinary,physics, applied
Ultrafast-response and broad-spectrum polarization sensitive photodetector based on Bi1.85In0.15S3 nanowire

Zhangxun Mo,Fen Zhang,Danyang Wang,Baocheng Cui,Qinglin Xia,Bo Li,Jun He,Mianzeng Zhong

DOI: https://doi.org/10.1063/5.0093115

IF: 4

2022-05-20

Applied Physics Letters

Abstract:Applied Physics Letters, Volume 120, Issue 20, May 2022. Alloying of semiconductors is a good strategy to manipulate their electronic band structures, which can broaden the photoresponse range of the corresponding optoelectronic devices. In addition, building a Schottky diode and improving the crystal quality of the channel semiconductor can improve the photoresponse speed of the optoelectronic device. Here, we report the design and preparation of Bi1.85In0.15S3 nanowires by a facile chemical vapor transport method. The individual Bi1.85In0.15S3 nanowire photodetectors realize excellent photoresponse in a broadband range from solar-blind deep ultraviolet (266 nm) to near-infrared (830 nm), and the obtained maximum external photoresponsivity of 95.99 A/W and detectivity of about [math] Jones at 638 nm. Furthermore, the photodetectors also exhibit the ultrafast photoresponse speed with the rise time of 190 ns and the fall time of 180 ns, owing to the high crystal quality and the Schottky contacts between the Au electrodes and nanowires. In addition, the photoresponse of photodetectors is polarization angle sensitive in a broadband range from 266 to 808 nm, and the obtained maximum dichroic ratio is 3.54 at 808 nm, which results from the structural anisotropy of the Bi1.85In0.15S3 crystal. These performances are superior to the reported Bi2S3, In2S3, and other Bi or In sulfide nanowire photodetectors. The results render (BixIn1−x)2S3 photodetectors have significant application potentials in multifunctional optoelectronics and electronics.

physics, applied
Synthesis of Thin Bi9O7.5S6 Nanosheets for Improved Photodetection in a Wide Wavelength Range.

Ronghua Yi,Jin Wang,Xiaoping Yue,Yan Liang,Zhuoyao Li,Huixiang Sheng,Mengdan Guan,Yameng Zhu,Qizeng Sun,Li Wang,Xiao Huang,Gang Lu

DOI: https://doi.org/10.1002/asia.202100963

2021-01-01

Chemistry - An Asian Journal

Abstract:Bismuth-based compounds possess layered structures with a variety of stacking modes, endowing the compounds with diverse properties. As one type of bismuth oxysulfides, Bi9O7.5S6 nanocrystals has great applications in photodetection; however, the responsivity of bulky Bi9O7.5S6 is limited due to the poor charge separation. Herein, single-crystalline Bi9O7.5S6 thin nanosheets are successfully synthesized by using a solvothermal method. The thickness of the obtained Bi9O7.5S6 nanosheets is down to 15 nm and can be easily tuned by varying the reaction period. Moreover, the Bi9O7.5S6 nanosheets show strong light absorption in the visible and near infrared range, making it a promising candidate in optoelectronics. As a demonstration, the thin Bi9O7.5S6 nanosheets are used as active layer in an optoelectronic device, which exhibits sensitive photoelectric response to light in a wide range of 400-800 nm. The responsivity of the device reaches up to 1140 mu A W-1, and the performance of the device is stable after long-period illumination. This work demonstrates a great potential of the thin Bi9O7.5S6 nanosheets in optoelectronic devices, and these nanosheets may also be extended to various optoelectronic applications.
Single Crystalline SmB6 Nanowires for Self-Powered, Broadband Photodetectors Covering Mid-Infrared

Yong Zhou,Jiawei Lai,Lingjian Kong,Junchao Ma,Zhu Lin,Fang Lin,Rui Zhu,Jun Xu,Shiu-Ming Huang,Dongsheng Tang,Song Liu,Zhensheng Zhang,Zhi-Min Liao,Dong Sun,Dapeng Yu

DOI: https://doi.org/10.1063/1.5023328

IF: 4

2018-01-01

Applied Physics Letters

Abstract:Self-powered photodetectors with a broadband response have attracted great attention due to their potential applications in sensing, imaging, communication, and spectroscopy. Specifically, those with the detection wavelength range covering mid-infrared at room temperature are very challenging and highly desired. Here, the photoresponse of self-powered SmB6 photodetectors is demonstrated through the spatially resolved photocurrent mapping. The photocurrent originates from the interface between the SmB6 and Au electrodes due to the charge separation by built-in electric fields at the interface. It exhibits a stable photoresponse over broadband wavelengths ranging from 488 nm to 10.6 μm at room-temperature. Our results suggest that the chemical vapor deposition grown SmB6 nanowires could be promising candidates for future broadband self-powered detectors and pave the way toward SmB6-based optoelectronic applications.
An Optimized Ultraviolet‐A Light Photodetector with Wide‐Range Photoresponse Based on ZnS/ZnO Biaxial Nanobelt

Linfeng Hu,Jian Yan,Meiyong Liao,Hongjun Xiang,Xingao Gong,Lide Zhang,Xiaosheng Fang

DOI: https://doi.org/10.1002/adma.201200512

IF: 29.4

2012-01-01

Advanced Materials

Abstract:A novel 1D/1D nanocomposite-based photodetector is successfully fabricated from high-crystalline ZnS/ZnO biaxial nanobelts for the first time. Optimized performance of the ZnS/ZnO nanobelt photodetector is much better than that of pure ZnS or ZnO nanostructures, with a wide-range UV-A light photoresponse, high sensitivity, and very fast response speed.
Solution-processed bismuth sulfide incorporated with zinc for high-gain and low-noise photodetection

Xiangming Fang,Zhenglin Jia,Yujie Yang,Ruiming Li,Huiming Huang,Qianqian Lin

DOI: https://doi.org/10.1063/5.0150175

IF: 4

2023-05-08

Applied Physics Letters

Abstract:Bismuth sulfide possesses an extremely high absorption coefficient, a relatively small bandgap, and high charge carrier mobility, which are favorable for photovoltaics and photodetection. However, the device performance of binary Bi2S3 is still limited by the poor charge transport and complicated trap features caused by the stoichiometric imbalance, as both sulfur vacancy and bismuth vacancy could result in tremendous trap states. In this work, we incorporate a small amount of extrinsic elements in the solution-processed Bi2S3 thin films and systematically investigate the influence of extrinsic doping on the charge transport properties of Bi2S3 thin films via time-resolved microwave conductivity and field-effect transistors. We also fabricate photodetectors based on these Zn2+ incorporated Bi2S3 thin films and achieve state-of-the-art device performance, including relatively high on/off ratio, high responsivity, and extremely low dark current and noise, which is promising for next-generation solution-processed photodetection.

physics, applied
Facile fabrication and characterization of two-dimensional bismuth(iii) sulfide nanosheets for high-performance photodetector applications under ambient conditions.

Weichun Huang,X. Dai,Jianqing Li,C. Xing,Leiming Wu,Han Zhang,D. Fan,Y. Xiang,Yunzheng Wang,Dingtao Ma,Zhongjun Li

DOI: https://doi.org/10.1039/c7nr09046c

IF: 6.7

2018-02-01

Nanoscale

Abstract:Two-dimensional (2D) bismuth(iii) sulfide (Bi2S3) nanosheets as non-toxic graphene-like nanomaterials were successfully fabricated by a facile liquid phase exfoliation (LPE) method. A robust photodetector employing a Bi2S3 nanosheet film has been fabricated for the first time via a facile fabrication process on an ITO-coated glass. UV-Vis and Raman spectroscopy techniques were carried out and they confirmed the inherent optical and physical properties of Bi2S3 nanosheets. Photoelectrochemical (PEC) measurements demonstrate that a significantly higher photocurrent density (42 μA cm-2) and enhanced photoresponsivity (210 μA W-1), at a lower bias potential in alkaline solution, of the Bi2S3 nanosheet-based photodetector are achieved, compared with those of other 2D nanomaterial-based photodetectors under light irradiation. Furthermore, the as-prepared Bi2S3 nanosheet-based photodetector not only exhibits an appropriate capacity of self-driven broadband and high-performance photoresponse but also displays strong long-term stability of the ON/OFF switching behaviour without any external protection in alkaline solutions. Because of facile synthesis via a LPE method, a higher photocurrent density and photoresponsivity, self-driven performance and long-term stability of the Bi2S3 nanosheet-based photodetector at a lower bias potential in alkaline solutions, the present work can provide fundamental acknowledgement of the high performance of this new kind of PEC-type 2D nanosheet-based photodetector.

Engineering,Materials Science,Physics,Chemistry,Medicine
Sensitive solution-processed Bi2S3 nanocrystalline photodetectors

Gerasimos Konstantatos,Larissa Levina,Jiang Tang,Edward H Sargent

DOI: https://doi.org/10.1021/nl802600z

Abstract:Solution-processed nanocrystal optoelectronic devices offer large-area coverage, low cost, and compatibility with a wide range of substrates. Recently, photodetectors and photovoltaics based on spin-coated nanoparticle films have shown tremendous progress in performance. However, high-performance devices reported to date have employed either Pb or Cd, raising concerns regarding environmental impact and regulatory acceptance. Herein we report a high-performance solution-processed photodetector based instead on Bi2S3 nanocrystals. The devices exhibit photoconductive gain on the order of 10 combined with temporal response on the 10 ms time scale. The resultant solution-processed Bi2S3 nanorod photoconductive photodetectors are of interest in visible and near-infrared (NIR) wavelength applications requiring video-frame-rate temporal response.
Facile Microwave-Assisted Synthesis of Uniform Sb2Se3nanowires for High Performance Photodetectors

Yong-Qiang Liu,Meng Zhang,Feng-Xia Wang,Ge-Bo Pan

DOI: https://doi.org/10.1039/c3tc31883d

IF: 6.4

2014-01-01

Journal of Materials Chemistry C

Abstract:A facile and rapid microwave-assisted method was developed to synthesize uniform single-crystalline Sb2Se3 nanowires in high yields. The as-prepared Sb2Se3 nanowires were directly used for fabricating prototype photodetectors. The device displayed a remarkable response to light intensity with an on/off ratio larger than 150, short response/recovery times (0.2/1.2 s), and long-term durability. The high sensitivity and robust environmental stability of the devices demonstrate the bright prospects for Sb2Se3 nanowires in highly efficient photodetectors for practical use.
Photodetectors: Fabrication of Ultrathin Bi2S3 Nanosheets for High‐Performance, Flexible, Visible–NIR Photodetectors (small 24/2015)

Guihuan Chen,Yongqiang Yu,Kun Zheng,Tao Ding,Wenliang Wang,Yang Jiang,Qing Yang

DOI: https://doi.org/10.1002/smll.201570138

IF: 13.3

2015-01-01

Small

Abstract:Simple drop-deposition of ultrathin Bi2S3 nanosheets allows the low-cost construction of excellent flexible photodetectors. On page 2848, Q. Yang and co-workers report a simple organometallic route to ultrathin Bi2S3 nanosheets with thicknesses down to 2.2 nm. The nanosheets can be applied for the fabrication of photoconductors that show high sensitivity to visible–NIR light from 405 to 780 nm with a high external photoresponsivity up to 4.4 A W−1, a high detectivity of 1011 Jones, a response time as fast as 10 μs, and high flexibility and durability.
Bandgap Engineering of BiIns Nanowire for Wide‐Spectrum, High‐Responsivity, and Polarimetric‐Sensitive Detection

Fen Zhang,Zhangxun Mo,Baocheng Cui,Shuo Liu,Qinglin Xia,Bo Li,Linwei Li,Zhengwei Zhang,Jun He,Mianzeng Zhong

DOI: https://doi.org/10.1002/adfm.202306077

IF: 19

2023-07-25

Advanced Functional Materials

Abstract:By regulating atomic proportions to achieve bandgap engineering, (BixIn1−x)2S3 nanowires with broadband, high responsivity, and angle sensitivity for optoelectronic devices with near‐ideal numerical accuracy in image recognition are obtained. Bandgap engineering can be a promising method for high‐performance photodetectors. Optical devices based on alloying semiconductors offer a plethora of new possibilities for detection across a broad spectrum. Among these devices, nanowire‐based devices have gained much attention due to their remarkable specific surface area properties in terms of material synthesis, device structure, and performance. In this work, (BixIn1−x)2S3 nanowires are designed by controlling the ratio of Bi and In atoms. The atomic ratio directly affects the electronic band structure of the crystal, thereby further optimizing the performance of optoelectronic devices. According to the experimental results, Bi1.28In0.72S3 nanowire‐based photodetectors obtain the most excellent photoresponse performance. The typical device demonstrates a spectral response from deep ultraviolet (DUV 254 nm) to near‐infrared (NIR 1064 nm) and achieves a maximum dichroic ratio of photoresponse of 1.5 under polarization‐angle‐sensitive detection in the 266–808 nm range. It also exhibits a photoresponse of 10.1 A W−1 and a photodetectivity of 5.7 × 1010 Jones under 532 nm light irradiation. Additionally, the photodetector displays a fast response speed with a rise/fall time of 5/4.7 ms. Finally, "CSU" and puppy images produced by this device further demonstrate the effectiveness of alloying semiconductors in creating wide‐spectrum, high‐responsivity, fast‐response, and polarimetric‐sensitive photodetectors.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Broadband Detection Based on 2D Bi2Se3/ZnO Nanowire Heterojunction

Zhi Zeng,Dongbo Wang,Jinzhong Wang,Shujie Jiao,Donghao Liu,Bingke Zhang,Chenchen Zhao,Yangyang Liu,Yaxin Liu,Zhikun Xu,Xuan Fang,Liancheng Zhao

DOI: https://doi.org/10.3390/cryst11020169

IF: 2.7

2021-01-01

Crystals

Abstract:The investigation of photodetectors with broadband response and high responsivity is essential. Zinc Oxide (ZnO) nanowire has the potential of application in photodetectors, owing to the great optoelectrical property and good stability in the atmosphere. However, due to a large number of nonradiative centers at interface and the capture of surface state electrons, the photocurrent of ZnO based photodetectors is still low. In this work, 2D Bi2Se3/ZnO NWAs heterojunction with type-I band alignment is established. This heterojunction device shows not only an enhanced photoresponsivity of 0.15 A/W at 377 nm three times of the bare ZnO nanowire (0.046 A/W), but also a broadband photoresponse from UV to near infrared region has been achieved. These results indicate that the Bi2Se3/ZnO NWAs type-I heterojunction is an ideal photodetector in broadband detection.
2D BiSeI Nanosheets for Broadband Self‐powered Photoelectrochemical Photodetector

Lei Xu,Mengtong Yang,Qidong Lu,Yuxin Ren,Yi Chen,Jinjia Guo,Mingjie Cai,Xiao Miao,Feng Teng,Haibo Fan,Chunmei Zhang,Xuexia He,Peng Hu

DOI: https://doi.org/10.1002/pssr.202300183

2023-06-27

physica status solidi (RRL) - Rapid Research Letters

Abstract:Broadband photodetectors are essential for the integrated design of next‐generation optical detector devices. Ternary two‐dimensional bismuth sulfide semiconductor (BiXI, X=S, Se, Te) is an ideal candidate for broadband photoelectric detection due to its narrow band gap and excellent electrical transport performance. Here, BiSeI was grown by chemical vapor transport (CVT) method and used in photoelectrochemical (PEC) photodetection. The PEC‐type photodetector based on BiSeI nanosheets has a broadband detection ranging from 350 nm to 900 nm, displaying a high responsivity of 2.88 mA W‐1, a high detectivity of 1.10×1010 Jones and a fast response time of 7/16 ms at a bias voltage of 0.5 V. Furthermore, the device also exhibits a negligible current density loss after three months, which indicates that it has good stability against air and moisture. In addition, the photodetector can work without bias potential, indicating that it is a good self‐powered device. The results demonstrate that BiSeI is a potential material in self‐powered PEC photodetector. This article is protected by copyright. All rights reserved.

physics, condensed matter, applied,materials science, multidisciplinary

Synthesis of Bismuth Sulfide Nanobelts for High Performance Broadband Photodetectors

Ultra-broadband Microfiber-Coupled Superconducting Single-Photon Detector

Facile Synthesis of Bismuth Nanoparticles for Efficient Self-Powered Broadband Photodetector Application

High-Performance Broadband Photoelectrochemical Photodetectors Based on Ultrathin Bi2O2S Nanosheets.

Single Bi2S3/Bi2S3-xOx Nanowire Photodetector with Broadband Response from Ultraviolet to Near-Infrared Range

Ultrafast Broadband Photodetector Based on SnS Synthesized by Hydrothermal Method

A High Performance Broadband Photodetector Based on (snxsb1−x)2se3 Nanorods with Enhanced Electrical Conductivity

Fabrication of Ultrathin Bi2 S3 Nanosheets for High-Performance, Flexible, Visible-NIR Photodetectors.

A self-powered high performance UV-Vis-NIR broadband photodetector based on β-Bi2O3 nanoparticles through defect engineering

Ultrafast-response and broad-spectrum polarization sensitive photodetector based on Bi1.85In0.15S3 nanowire

Synthesis of Thin Bi9O7.5S6 Nanosheets for Improved Photodetection in a Wide Wavelength Range.

Single Crystalline SmB6 Nanowires for Self-Powered, Broadband Photodetectors Covering Mid-Infrared

An Optimized Ultraviolet‐A Light Photodetector with Wide‐Range Photoresponse Based on ZnS/ZnO Biaxial Nanobelt

Solution-processed bismuth sulfide incorporated with zinc for high-gain and low-noise photodetection

Facile fabrication and characterization of two-dimensional bismuth(iii) sulfide nanosheets for high-performance photodetector applications under ambient conditions.

Sensitive solution-processed Bi2S3 nanocrystalline photodetectors

Facile Microwave-Assisted Synthesis of Uniform Sb2Se3nanowires for High Performance Photodetectors

Photodetectors: Fabrication of Ultrathin Bi2S3 Nanosheets for High‐Performance, Flexible, Visible–NIR Photodetectors (small 24/2015)

Bandgap Engineering of BiIns Nanowire for Wide‐Spectrum, High‐Responsivity, and Polarimetric‐Sensitive Detection

Broadband Detection Based on 2D Bi2Se3/ZnO Nanowire Heterojunction

2D BiSeI Nanosheets for Broadband Self‐powered Photoelectrochemical Photodetector