Spontaneous Symmetry Lowering of Si (001) Towards Two-Dimensional Ferro/antiferroelectric Behavior
Chengcheng Xiao,Xinwei Wang,Xiaodong Pi,Shengyuan A. Yang,Yuanping Feng,Yunhao Lu,Shengbai Zhang
DOI: https://doi.org/10.1103/physrevmaterials.3.044410
IF: 3.98
2019-01-01
Physical Review Materials
Abstract:Electronic polarization, manifested in numerous physical phenomena such as ferroelectricity, piezoelectricity, and pyroelectricity, is of great importance to many technological applications. The presence of ferroelectricity in bulk elemental materials is extremely rare due to the high symmetry of the underlying lattices. However, the presence of a surface lowers the symmetry, which may provide a future avenue for achieving robust ferroelectric polarization. Using first-principles calculations, we show that a spontaneous electrical polarization can be realized on the silicon reconstructed (001) surface. The magnitude of this polarization is $0.45\ifmmode\times\else\texttimes\fi{}{10}^{\ensuremath{-}10}\phantom{\rule{0.16em}{0ex}}\mathrm{C}/\mathrm{m}$, comparable to those in benchmarking two-dimensional ferroelectric compounds such as SnTe and SnSe. The symmetry lowering is originated from a Peierls instability that removes the degeneracy of surface dangling bonds, whereby opening a band gap. Although flip-flop of the surface dimers may destroy the ordered phase at elevated temperatures, we find that a modest compressive strain, which increases the local stress and interdimer coupling, can drastically increase the robustness of the ferroelectric state towards room-temperature operations. The technology for processing Si has been well developed and the Si (001) surface has also been widely used in various electronic devices. Our discovery here thus holds high promise in a multitude of fields, ranging from nanoscale random access memory to low power consumption energy storage devices.