Abstract:Large-scale molecular dynamics (MD) simulations, along with bond-order interatomic potentials, have been employed to study defect production, clustering and their evolution within high energy displacement cascades in semiconductors. Based on the MD results, the damage density within a cascade core is evaluated, and used to describe a new energy partition function. In addition, we have further developed a model to determine the non-ionizing energy loss (NIEL) for semiconductors, which can be used to predict the displacement damage degradation induced by space radiation on electronic components. The atomic-level based NIEL model has been applied to GaAs and GaN. At low energies, the most surviving defects are single interstitials and vacancies, and only 20% of the interstitial population is contained in clusters in GaAs, but a direct-impact amorphization in GaAs occurs with a high degree of probability during the cascade lifetime for Ga PKAs (primary knock-on atoms) with energies higher than 2 keV. However, a large number of atoms will be displaced during the collisional phase with a compacted cascade volume in GaN, and consequently, a great number of displaced atoms recombine significantly with vacancies at the same time, i.e., a pseudo-metallic behavior (PMB). This leads to the result that the majority of surviving defects are just single interstitials or vacancies for all recoil energies considered with only a small number of defects forming clusters. The total number of defects simulated in GaN can be very well predicted by the simplied Norgett, Robison and Torrens (NRT) formula due to the PMB, in contrast to GaAs where the defect number becomes much larger than the NRT value. The calculated NIEL in GaN is often found smaller than that predicted by a model based on the simple Kinchin-Pease formula. The comparisons of defect creation, density and effective NIEL in GaN to those of GaAs suggest that GaN may be much more resistant to displacement damage than GaAs, and therefore, very suitable for use in high-power space-energy systems and space-probe applications.

Primary Damage of 10 Kev Ga PKA in Bulk GaN Material under Different Temperatures

Temperature Effect on GaN Threshold Displacement Energy under Low‐Energy Electron Beam Irradiation

Molecular dynamics simulations of displacement damage in SiGe alloys induced by single and binary primary knock-on atoms under different temperatures

Molecular Dynamics Study on the Mechanism of Gallium Nitride Radiation Damage by Alpha Particles

Defects in GaN Films Studied by Positron Annihilation Spectroscopy

Atomic-level based non-ionizing energy loss: an application to GaAs and GaN semiconductor materials

A combined AIMD and DFT study of the low-energy radiation responses of GaN

Simulation Study of Displacement Damage Induced by Protons in Al<sub>x</sub>Ga<sub>1</sub><em><sub>−</sub></em><sub>x</sub>N Materials

A refined numerical simulation approach to assess the neutron irradiation effect on the mechanical behavior of wurtzite GaN

Atomic displacement threshold energies and defect generation in GaN, AlN, and AlGaN: A high-throughput molecular dynamics investigation

Simulation study of displacement damage induced by protons in Al x Ga 1 − x N materials

Simulation of Displacement Damage Induced by Protons Incident on AlxGa1-xN Materials

Unveiling the temperature-dependent deformation mechanisms of single crystal gallium nitride in nanoscratching

Insight of displacement cascade evolution in gallium arsenide through molecular dynamics simulations

Radiation-induced defects in the InGaN/GaN superlattice structure

Temperature Dependence of the Point Defect Properties of GaN Thin Films Studied by Terahertz Time-Domain Spectroscopy

Study of Radiation Damage in Mg+-implanted GaN

Neural‐Network Potential Simulation of Defect Formation Induced by Knock‐On Irradiation Damage in GaN

Molecular dynamics studies of defect formation during heteroepitaxial growth of InGaN alloys on (0001) GaN surfaces

Threshold displacement energies and primary radiation damage in AlN from molecular dynamics simulations

Effect of lattice defects on the property of GaN crystal: A molecular dynamics simulation study