Abstract:To increase integration scale of superconductor electronics, we are developing a new, SFQ7ee, node of the fabrication process at MIT Lincoln Laboratory. In comparison to the existing SFQ5ee node, we increased the number of fully planarized superconducting layers to ten and utilized NbN and NbN/Nb kinetic inductors to increase the inductor number density above 100 million per cm$^2$. Increasing the Josephson junction (JJ) number density to the same level requires implementing self-shunted high-$J_c$ JJs. We investigated properties of Nb/NbN$_x$/Nb trilayer JJs as a potential replacement of high-$J_c$ Nb/Al-AlO$_x$/Nb JJs, where NbN$_x$ is a disordered, nonsuperconducting nitride deposited by reactive sputtering. Dependences of the $I_cR_n$ product and Josephson critical current density, $J_c$ on the NbN$_x$ barrier thickness and on temperature were studied in the thickness range from 5 nm to 20 nm. The fabricated JJs can be described by the microscopic theory of SNS junctions, assuming no suppression of the energy gap in Nb electrodes near the NbN$_x$ interfaces and a Cooper pair decay length in the NbN$_x$ barrier of about 2.3 nm. Current-voltage characteristics of the JJs are well described by the RCSJ model. In the studied range $J_c$ < 10 mA/$\mu$$m^2$, the Nb/NbN$_x$/Nb JJs have lower specific resistance $R_nA$, lower $I_cR_n$ product, and a stronger dependence of the $I_cR_n$ on temperature than self-shunted or critically damped externally shunted Nb/Al-AlO$_x$/Nb JJs with the same critical current density; here $A$ is the JJ area, $R_n$ the JJ effective shunting resistance.

Hybrid Nb/Al/Ba0.5K0.5Fe2As2 Sandwich Josephson Junctions

Nb/Au/NbSe2 Hybrid Josephson Junctions

Tl2Ba2CaCu2O8 Bicrystal Josephson Junctions Operated Close to 100 K

Self-aligning fabrication and DC characterization of Nb/AlOx/Nb superconducting Josephson junctions

Directional Point-Contact Josephson Junctions on Ba 0.4 K 0.6 (feas) 2 Single Crystals

Josephson Effect in NbS$_{2}$ van der Waals Junctions

Fabrication and measurements of hybrid Nb/Al Josephson junctions and flux qubits with pi-shifters

Quantum Hall Effect in a Josephson Junction

Persistent Josephson tunneling between <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:msub><mml:mi>Bi</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mi>Sr</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mi>CaCu</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mi

Supercurrent, Multiple Andreev Reflections and Shapiro Steps in InAs Nanosheet Josephson Junctions

Co-doped BaFe2As2 Josephson Junction Fabricated with a Focused Helium Ion Beam

Intrinsically shunted NbN/TaN/NbN Josephson junctions on Si substrates for large-scale integrated circuits applications

Step-Edge Josephson Junctions on Multilayered High Temperature Superconducting Thin Film

Development of Self-Shunted Josephson Junctions For a Ten-Superconductor-Layer Fabrication Process: Nb/NbN$_x$/Nb Junctions

Vector-substrate-based Josephson junctions

Electron beam lithography and ion implantation techniques for fabrication of high-Tc Josephson junctions

Fabrication and Characteristics of Intrinsic Josephson Junctions in Bi 2 Sr 2 CaCu 2 O 8+x Single Crystals

Co-doped BaFe 2 As 2 Josephson junction fabricated with a focused helium ion beam

Individual Shapiro Steps Observed In Resistively Shunted Intrinsic Josephson Junctions On Bi2sr2cacu2o8+X Single Crystals

Bi2sr2cacu2o8+Delta Intrinsic Josephson Junctions Fabricated By A Simple Technique Without Photolithography

Fabrication of sandwich-type MgB 2 /Boron/MgB 2 Josephson junctions with rapid annealing method