Abstract:Two-terminal resistive switching devices are commonly plagued with longstanding scientific issues including interdevice variability and sneak current that lead to computational errors and high-power consumption. This necessitates the integration of a separate selector in a one-transistor-one-RRAM (1T-1R) configuration to mitigate crosstalk issue, which compromises circuit footprint. Here, we demonstrate a multi-terminal memtransistor crossbar array with increased parallelism in programming via independent gate control, which allows in situ computation at a dense cell size of 3–4.5 F2 and a minimal sneak current of 0.1 nA. Moreover, a low switching energy of 20 fJ/bit is achieved at a voltage of merely 0.42 V. The architecture is capable of performing multiply-and-accumulate operation, a core computing task for pattern classification. A high MNIST recognition accuracy of 96.87% is simulated owing to the linear synaptic plasticity. Such computing paradigm is deemed revolutionary toward enabling data-centric applications in artificial intelligence and Internet-of-things.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsnano.0c09441?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsnano.0c09441</a>.Figures S1–S11: Materials and characterization, device design, experimental details, measurement data, and simulation. Table S1: Average current and standard deviation statistics. Note S1: Description of the compact model (<a class="ext-link" href="/doi/suppl/10.1021/acsnano.0c09441/suppl_file/nn0c09441_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

In-Memory Digital Comparator Based on a Single Multivalued One-Transistor-One-Resistor Memristor

Boolean and Sequential Logic in a One‐Memristor‐One‐Resistor (1M1R) Structure for In‐Memory Computing

Reconfigurable Nonvolatile Boolean Logic with One-Transistor-two-memristor for In-Memory Computing

A Non-Volatile Comparator Based On 1t1m Crossbar Arrays Using Memristor-Aided Logic

Nonvolatile Logic‐in‐Memory Computing Based on Solution‐Processed CuI Memristor

Self-Selective Multi-Terminal Memtransistor Crossbar Array for In-Memory Computing

Implementation of Highly Reliable and Energy Efficient in‐Memory Hamming Distance Computations in 1 Kb 1‐Transistor‐1‐Memristor Arrays

Reconfigurable Stateful Logic Circuit with Cu/CuI/Pt Memristors for In-Memory Computing

Memristive Combinational And Sequential Logic For In-Memory Computing

Efficient 16 Boolean Logic and Arithmetic Based on Bipolar Oxide Memristors

Reconfigurable Logic in Nanosecond Cu/GeTe/TiN Filamentary Memristors for Energy-Efficient In-Memory Computing

Experimental Demonstration of Non-Stateful In-Memory Logic with 1T1R OxRAM Valence Change Mechanism Memristors

Memristor‐Based Efficient In‐Memory Logic for Cryptologic and Arithmetic Applications

Reprogrammable Logic in Memristive Crossbar for In-Memory Computing

Functional Demonstration of a Memristive Arithmetic Logic Unit (memalu) for In‐Memory Computing

Dual-Ferroelectric-Coupling-Engineered Two-Dimensional Transistors for Multifunctional In-Memory Computing

Design of Heterogeneous Memristor Based 1T2M Multi-value Memory Crossbar Array

Functionally Complete Boolean Logic and Adder Design Based on 2T2R RRAMs for Post-CMOS In-Memory Computing

In-Memory Computing With Memristor Arrays

Nonvolatile memristive logic: a road to in-memory computing

A Compact Scheme of Reading and Writing for Memristor-Based Multivalued Memory